BSM50GD120DLC Infineon Technologies, BSM50GD120DLC Datasheet - Page 7

• Manufacturer Part Number: BSM50GD120DLC
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM50GD120DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 85A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 85 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
120
100
80
60
40
20
0
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
IC,Modul
IC,Chip
200
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM50GD120DLC
400
68,32
0,009
41,46
0,003
0,1
1
600
7(8)
V
229,97
0,045
305,3
0,022
CE
800
2
t [sec]
[V]
1
Z
thJC
V
GE
= 15V, R
1000
= f (t)
271,51
Zth:Diode
Zth:IGBT
18,25
0,073
0,064
3
g
10
= 15 Ohm, T
1200
33,46
0,229
81,73
0,344
vj
4
= 125°C
1400
100
Seriendatenblatt_BSM50GD120DLC.xls