MT9HVF12872RHY-667G1 Micron Technology Inc, MT9HVF12872RHY-667G1 Datasheet

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MT9HVF12872RHY-667G1

Manufacturer Part Number
MT9HVF12872RHY-667G1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9HVF12872RHY-667G1

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200VLP SORDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
1Gb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.215A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
DDR2 SDRAM VLP SORDIMM
MT9HVF6472RH – 512MB
MT9HVF12872RH – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, very low-profile (ATCA compatible), small-
• Fast data transfer rates: PC2-3200, PC2-4200,
• 512MB (64 Meg x 72), 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• Vdd = Vddq = +1.8V
• Vddspd = +3.0V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• PLL to reduce system clock line loading
• Gold edge contacts
• Single rank
• I
Table 1:
PDF: 09005aef82882ca3/Source: 09005aef82882c52
HVF9C64_128x72RH.fm - Rev. C 1/09 EN
outline registered dual in-line memory module (VLP
SORDIMM)
PC2-5300, or PC2-6400
operation
Speed
Grade
2
-80E
-800
-667
-53E
-40E
C temperature sensor
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
512MB, 1GB (x72, ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM
t
CK
CL = 6
800
Data Rate (MT/s)
CL = 5
800
667
667
www.micron.com
1
CL = 4
533
533
533
533
400
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
PCB height: 17.9mm (0.70in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (lead-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 17.9mm (0.70in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency; registered mode
3. Not recommended for new designs.
CL = 3
module offerings.
will add one clock cycle to CL.
400
400
400
200-Pin VLP SORDIMM
(ATCA Compatible)
t
(ns)
12.5
RCD
15
15
15
15
A
A
1
2
≤ +85°C)
≤ +70°C)
©2007 Micron Technology, Inc. All rights reserved.
3
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-53E
-40E
-800
-667
Y
I
(ns)
t
55
55
55
55
55
RC

Related parts for MT9HVF12872RHY-667G1

MT9HVF12872RHY-667G1 Summary of contents

Page 1

... MT9HVF12872RH – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, very low-profile (ATCA compatible), small- outline registered dual in-line memory module (VLP SORDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 Meg x 72), 1GB (128 Meg x 72) • ...

Page 2

... Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) designating component and PCB revisions. Consult factory for current revision codes. Example: MT9HVF12872RHY-667E1. PDF: 09005aef82882ca3/Source: 09005aef82882c52 HVF9C64_128x72RH.fm - Rev. C 1/09 EN ...

Page 3

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin VLP SORDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 51 DQ18 101 3 DQ0 53 DQ19 103 ...

Page 4

... Reference voltage: Vdd/2. Vss Supply Ground. NC – No connect: These pins are not connected on the module. NF – No function: Connected within the module, but provides no functionality. PDF: 09005aef82882ca3/Source: 09005aef82882c52 HVF9C64_128x72RH.fm - Rev bus. 4 Pin Assignments and Descriptions 2 C bus. Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 5

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 ...

Page 6

... DDR2 SDRAM devices on the following rising clock edge (data access is delayed by one clock cycle). A phase-lock loop (PLL) on the module receives and redrives the differential clock signals (CK, CK#) to the DDR2 SDRAM devices. The register(s) and PLL reduce clock, control, command, and address signal loading by isolating DRAM from the system controller ...

Page 7

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability ...

Page 8

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 9

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Idd Specifications Table 9: DDR2 Idd Specifications and Conditions – 512MB Values shown for MT47H64M8 DDR2 SDRAM only and are computed from the values specified in the 512Mb (64 Meg ...

Page 10

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Table 10: DDR2 Idd Specifications and Conditions – 1GB Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component ...

Page 11

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Register and PLL Specifications Table 11: Register Specifications SSTU32872 devices or equivalent Parameter Symbol Vih(DC) DC high-level input voltage DC low-level Vil(DC) input voltage AC high-level Vih(AC) input voltage Vil(AC) ...

Page 12

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Table 12: PLL Specifications CUA845 device or JESD82-21 equivalent Parameter Symbol DC high-level input Vih OE, OS, CK, voltage DC low-level input Vil OE, OS, CK, voltage Vin Input voltage ...

Page 13

... ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Temperature Sensor with Serial Presence-Detect EEPROM The temperature sensor continuously monitors the module’s temperature and can be read back at any time over the I Table 14: Temperature Sensor with Serial Presence-Detect EEPROM Operating Conditions ...

Page 14

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM The compare mode is similar to the interrupt mode, except EVENT# cannot be reset by the user and only returns to the logic HIGH state when the temperature falls below ...

Page 15

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Table 16: Temperature Sensor Registers Name Pointer register Capability register Configuration register Alarm temperature upper boundary register Alarm temperature lower boundary register Critical temperature register Temperature register Pointer Register The ...

Page 16

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Capability Register The capability register indicates the features and functionality supported by the temper- ature sensor. This register is a read-only register. Table 19: Capability Register Bits 15 14 RFU ...

Page 17

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Table 22: Configuration Register Bit Descriptions Bit Description 0 Event mode 0: Comparator mode 1: Interrupt mode 1 EVENT# polarity 0: Active LOW 1: Active HIGH 2 Critical event only ...

Page 18

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Figure 4: Hysteresis Applied to Temperature Around Trip Points Below window bit Above window bit Notes the value ...

Page 19

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Temperature Format The temperature trip point registers and the temperature readout register use a 2’s complement format to enable negative numbers. The least significant bit (LSB) is equal to 0.0625°C ...

Page 20

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Temperature Register The temperature register is a read-only register that provides the current temperature detected by the temperature sensor. The LSB for this register is 0.0625°C with a resolu- tion ...

Page 21

ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM Serial Presence-Detect Table 29: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to Vss Parameter/Condition Supply voltage with temperature sensor option Input high voltage: Logic 1; All inputs Input ...

Page 22

... TYP PIN 1 63.6 (2.504) TYP BACK VIEW U9 U10 U11 U13 4.2 (0.165) TYP 47.4 (1.87) TYP 22 Module Dimensions U7 18.0 (0.708) 17.8 (0.701) 10.0 (0.394) TYP TYP PIN 199 U12 PIN 2 11.4 (0.45) TYP 16.25 (0.64) TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

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