MT9HVF12872RHY-667G1 Micron Technology Inc, MT9HVF12872RHY-667G1 Datasheet - Page 18

• Manufacturer Part Number: MT9HVF12872RHY-667G1
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF12872RHY-667G1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200VLP SORDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 1Gb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.215A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / Rohs Status: Compliant

Figure 4:
Table 23:
PDF: 09005aef82882ca3/Source: 09005aef82882c52
HVF9C64_128x72RH.fm - Rev. C 1/09 EN
Condition
Clears
Sets
Hysteresis Applied to Alarm Window Bits in the Temperature Register
Hysteresis Applied to Temperature Around Trip Points
Above window bit
Below window bit
Notes:
1. T
2. T
3. Hyst is the value set in the hysteresis bits of the configuration register.
Temperature
T
T
Gradient
H
L
H
L
1
2
Falling
512MB, 1GB (x72, ECC, SR): 200-Pin DDR2 SDRAM VLP SORDIMM
Rising
is the value set in the alarm temperature lower boundary trip register.
is the value set in the alarm temperature upper boundary trip register.
Below Alarm Window Bit
Critical Temperature
T
L
- Hyst
18
T
L
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Temperature
Gradient
Falling
Rising
T
Above Alarm Window Bit
1
H
-
Hyst
3
©2007 Micron Technology, Inc. All rights reserved.
Capability Register
T
L
Critical Temperature
2
-
Hyst
3
T
H
T
- Hyst
H