M25PX16-VMW6G Micron Technology Inc, M25PX16-VMW6G Datasheet - Page 30

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M25PX16-VMW6G

Manufacturer Part Number
M25PX16-VMW6G
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M25PX16-VMW6G

Cell Type
NOR
Density
16Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 85C
Package Type
SO W
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
2M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Compliant

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Figure 13. Read Data Bytes (READ) instruction sequence and data-out sequence
1. Address bits A23 to A22 are Don’t care.
Read Data Bytes at higher speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, are shifted out on Serial Data output (DQ1) at a
maximum frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at higher speed (FAST_READ) instruction.
When the highest address is reached, the address counter rolls over to 000000h, allowing
the read sequence to be continued indefinitely.
The Read Data Bytes at higher speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at higher speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
DQ0
DQ1
S
C
0
1
High Impedance
2
Instruction
3
C
, during the falling edge of Serial Clock (C).
4
5
6
7
MSB
23
8
22 21
Figure
9 10
24-bit address
14.
3
28 29 30 31 32 33 34 35
2
1
0
MSB
7
6
5
Data Out 1
4
3
36 37 38
2
1
39
0
Data Out 2
7
AI13736

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