SUD25N06-45L-E3 Siliconix / Vishay, SUD25N06-45L-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD25N06-45L-E3
• Description: MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
• Manufacturer: Siliconix / Vishay

Specifications of SUD25N06-45L-E3

• Channel Type: N
• Current, Drain: 25 A
• Gate Charge, Total: 26 nC
• Package Type: TO-252
• Polarization: N-Channel
• Power Dissipation: 50 W
• Resistance, Drain To Source On: 0.025 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Time, Turn-off Delay: 31 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 25 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes:
a.
b.
c.
2-2
SUD25N06-45L
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
For design aid only; not subject to production testing.
Pulse test; pulse width
Independent of operating temperature.
G
c
c
V l
O S
Parameter
c
D i C
c
c
c
c
b
R
b
i
300 s, duty cycle
b
b
b
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
I
C
2%.
D(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
Q
g
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
rr
g
I
I
C
D
V
V
V
V
V
V
V
V
DS
DS
GS
GS
DS
= 25 C)
GS
I
I
= 60 V, V
= 60 V, V
= 10 V, I
= 30 V, V
V
= 10 V, I
25 A V
25 A, V
F
F
V
= 0 V, V
V
V
V
V
V
V
V
DS
V
DS
30 V V
= 25 A, di/dt = 100 A/ s
= 25 A, di/dt = 100 A/ s
I
Test Condition
GS
DD
DD
GS
GS
0 V V
DS
DS
F
DS
= 25 A, V
= 0 V, V
= V
= 0 V, I
= 30 V, R
= 60 V, V
= 10 V, I
= 4.5 V, I
= 15 V, I
= 5 V, V
a
30 V R
GEN
D
D
GS
DS
GS
GS
GS
= 12 A, T
= 12 A, T
, I
= 25 V, f = 1 MHz
,
= 10 V, R
= 0 V, T
= 0 V, T
D
GS
= 10 V, I
D
25 V f
10 V R
GS
GS
D
= 250
D
D
= 250
10 V I
L
L
GS
=
= 12 A
= 12 A
= 12 A
= 1.2
= 10V
= 0 V
= 0 V
1 2
J
J
J
J
20 V
= 125 C
D
G
= 125 C
= 175 C
= 175 C
A
1 MH
A
= 25 A
= 7.5
25 A
7 5
Min
1.0
60
20
15
Typ
0.025
0.045
0.058
0.036
1320
0.13
210
7.5
4.5
25
56
26
10
10
31
10
60
a
Max
0.035
0.063
0.081
0.045
150
3.0
1.5
50
40
20
20
45
20
30
90
100
1
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
V
A
A
F
C
C