NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 12

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Memory array organization
Figure 5.
12/53
Block
Page
1st half page
(256 bytes)
Memory array organization
Page buffer, 512 bytes
512 bytes
2nd half page
512 bytes
Block = 32 pages
Page = 528 bytes (512+16)
(256 bytes)
x8 DEVICES
bytes
bytes
16
16
8 bits
8 bits
Block
Page
256 words
Main area
NAND512xxA2D, NAND01GxxA2C
Page buffer, 264 words
256 words
Block = 32 pages
Page = 264 words (256+8)
x16 DEVICES
words
words
8
8
16 bits
16 bits
AI07587