NAND512W3A2DN6E Micron Technology Inc, NAND512W3A2DN6E Datasheet - Page 30

• Manufacturer Part Number: NAND512W3A2DN6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512W3A2DN6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Software algorithms
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Table 13.
Figure 15. Bad block management flowchart
Operation
Program
NAND flash failure modes
Erase
Read
Block Address =
START
Block 0
= FFh?
block?
Data
Last
END
YES
YES
NO
NO
Bad Block table
Update
Block Address
Increment
Block replacement
Block replacement
NAND512xxA2D, NAND01GxxA2C
Procedure
ECC
AI07588C