MT29F1G08ABBDAH4-IT:D Micron Technology Inc, MT29F1G08ABBDAH4-IT:D Datasheet - Page 32

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MT29F1G08ABBDAH4-IT:D

Manufacturer Part Number
MT29F1G08ABBDAH4-IT:D
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F1G08ABBDAH4-IT:D

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
128M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed

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Identification Operations
READ ID (90h)
Figure 24: READ ID (90h) with 00h Address Operation
Figure 25: READ ID (90h) with 20h Address Operation
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Note:
Note:
The READ ID (90h) command is used to read identifier codes programmed into the tar-
get. This command is accepted by the target only when all die (LUNs) on the target are
idle.
Writing 90h to the command register puts the target in read ID mode. The target stays
in this mode until another valid command is issued.
When the 90h command is followed by an 00h address cycle, the target returns a 5-byte
identifier code that includes the manufacturer ID, device configuration, and part-specif-
ic information.
When the 90h command is followed by a 20h address cycle, the target returns the 4-byte
ONFI identifier code.
Cycle type
Cycle type
1. See the READ ID Parameter tables for byte definitions.
1. See READ ID Parameter tables for byte definitions.
I/O[7:0]
I/O[7:0]
Command
Command
90h
90h
Address
Address
00h
20h
t
WHR
t WHR
32
Byte 0
D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
OUT
4Fh
OUT
1Gb x8, x16: NAND Flash Memory
Byte 1
D
D
OUT
4Eh
OUT
Identification Operations
Byte 2
D
D
OUT
46h
OUT
© 2010 Micron Technology, Inc. All rights reserved.
Byte 3
D
D
OUT
49h
OUT
Byte 4
D
OUT

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