PSMN3R5-80PS,127 NXP Semiconductors, PSMN3R5-80PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN3R5-80PS,127
• Description: MOSFET Power N-Ch 80V 3.5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN3R5-80PS,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 135 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 9961pF @ 40V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065169127

NXP Semiconductors
PSMN3R5-80PS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(A)
I
10
10
10
10
10
10
I
D
D
160
120
80
40
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
10
0.5
8
6
2
min
5.5
1
5
typ
4
V
GS
1.5
max
V
(V) = 4
All information provided in this document is subject to legal disclaimers.
GS
V
003aad685
DS
(V)
03aa35
4.5
(V)
2
6
Rev. 03 — 19 April 2011
N-channel 80 V, 3.5 mΩ standard level MOSFET in TO-220
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normailzed drain-source on-state resistance
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN3R5-80PS
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
003aad280
T
003aaf608
j
j
(°C)
( ° C)
180
180
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