PSMN4R5-30YLC,115 NXP Semiconductors, PSMN4R5-30YLC,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN4R5-30YLC,115
• Description: MOSFET Power N-CH 30 V 4.8 mOhms LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R5-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 61 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 20.5 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 20.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1324pF @ 15V
• Power - Max: 61W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065073115

NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN4R5-30YLC
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
I
10
10
D
10
10
10
10
10
10
-1
-2
-1
1
4
3
2
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
 = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
s ingle s hot
Parameter
thermal resistance from
junction to mounting base
10
-5
Limit R
DS on
= V
N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower
DS
All information provided in this document is subject to legal disclaimers.
10
/ I
1
-4
D
Conditions
see
Rev. 3 — 5 July 2011
DC
Figure 5
10
-3
10
10
-2
PSMN4R5-30YLC
Min
-
V
DS
10
P
(V)
t
100  s
10 ms
100 ms
1 ms
-1
p
=10  s
t
p
Typ
2.26
T
© NXP B.V. 2011. All rights reserved.
t
003a a e 982
003a a e 983
p
 =
(s )
Max
2.48
t
T
p
t
10
1
2
Unit
K/W
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