STP11NB40 STMicroelectronics, STP11NB40 Datasheet

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STP11NB40

Manufacturer Part Number
STP11NB40
Description
MOSFET Power N-Ch 400 Volt 11 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of STP11NB40

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10.7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP11NB40
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP11NB40
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP11NB40,11NB40
Manufacturer:
ST
0
Part Number:
STP11NB40FD
Manufacturer:
ST
0
Part Number:
STP11NB40FI
Manufacturer:
ST
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Part Number:
STP11NB40FP
Manufacturer:
ST
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10 000
Part Number:
STP11NB40FP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP11NB40FP
Manufacturer:
ST
0
Part Number:
STP11NB40FP P11NB40FP
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
September 1998
ST P11NB40
ST P11NB40FP
Symbol
dv/dt(
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
TYPICAL R
EXTREMELY HIGH dV/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
V
DM
V
V
V
T
P
N - CHANNEL 400V - 0.48 - 10.7A - TO-220/TO-220FP
DGR
I
I
T
ISO
GS
s tg
DS
D
D
tot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
G ate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
T otal Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation W ithstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
400 V
400 V
V
= 0.48
DSS
< 0.55
< 0.55
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
10.7 A
c
c
6.0 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
PowerMESH
INTERNAL SCHEMATIC DIAGRAM
10.7A, di/dt
TO-220
ST P11NB40
10.7
42.8
125
6.7
1.0
4.5
200 A/ s, V
1
STP11NB40FP
2
-65 to 150
3
Value
400
400
150
STP11NB40
DD
30
STP11NB40F P
V
(BR)DSS
TO-220FP
2000
42.8
0.32
6.0
3.8
4.5
40
MOSFET
, Tj
T
JMAX
1
W /
Un it
V/ns
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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STP11NB40 Summary of contents

Page 1

... September 1998 STP11NB40FP PowerMESH I D 10 TO-220 INTERNAL SCHEMATIC DIAGRAM Value ST P11NB40 10 100 C 6.7 c 42.8 C 125 1.0 4.5 -65 to 150 ( ) I 10.7A, di/dt 200 STP11NB40 MOSFET TO-220FP Un it STP11NB40F P 400 V 400 6.0 A 3 4.5 V/ns 2000 150 (BR)DSS JMAX 1/9 ...

Page 2

... STP11NB40/FP THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l Parameter I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by T max Single Pulse Avalanche Energy AS o (starting T ...

Page 3

... Test Con ditions Min. = 200 5 4 320 10 Test Con ditions Min. = 320 10 4 Test Con ditions Min 10.7 A di/dt = 100 100 150 C j Safe Operating Area for TO-220FP STP11NB40/FP T yp. Max. Unit 10 yp. Max. Unit yp. Max. Unit 10.7 A 42.8 A 1.6 V 400 ns 3 ...

Page 4

... STP11NB40/FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STP11NB40/FP Capacitance Variations Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STP11NB40/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP11NB40/FP MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 P011C 7/9 ...

Page 8

... STP11NB40/FP TO-220FP MECHANICAL DATA mm DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø ¯ 8/9 inch MAX. MIN. TYP. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2 ...

Page 9

... The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. STP11NB40/FP . 9/9 ...

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