STP11NB40 STMicroelectronics, STP11NB40 Datasheet - Page 3

• Manufacturer Part Number: STP11NB40
• Description: MOSFET Power N-Ch 400 Volt 11 Amp
• Manufacturer: STMicroelectronics

Specifications of STP11NB40

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10.7 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Symbo l
Symbo l
Symbo l
I
V
SDM
t
t
I
r (Voff)
SD
Q
Q
d(on)
RRM
Q
I
Q
SD
t
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
G
DD
DD
G
DD
= 4.7
= 4.7
= 10.7 A
= 10.7 A
= 200 V
= 320 V
= 320 V I
= 100 V
Test Con ditions
Test Con ditions
Test Con ditions
V
GS
D
di/dt = 100 A/ s
V
I
I
D
V
D
T
= 10.7 A V
GS
GS
j
= 5.3 A
= 10.7 A
= 10 V
= 150
= 0
Safe Operating Area for TO-220FP
= 10 V
o
C
GS
= 10 V
Min.
Min.
Min.
T yp.
10.6
11.8
T yp.
T yp.
400
3.4
17
10
29
10
10
17
17
STP11NB40/FP
Max.
Max.
Max.
10.7
42.8
1.6
25
15
41
14
14
25
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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