BUK9504-40A NXP Semiconductors, BUK9504-40A Datasheet - Page 8

• Manufacturer Part Number: BUK9504-40A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK9504-40A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9504-40A,127

NXP Semiconductors
BUK9504-40A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
10
I
10
10
10
10
10
D
10
-1
-2
-3
-4
-5
-6
8
6
4
2
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
V
GS
100
= 3 V
1
min
3.2
200
3.4
typ
3.6
2
3.8
max
300
V
All information provided in this document is subject to legal disclaimers.
GS
4
03aa36
I
D
(V)
(A)
03nd96
10
5
400
Rev. 2 — 7 February 2011
3
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
1.5
0.5
2
1
0
2
1
0
-60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9504-40A
60
60
max
typ
min
120
120
© NXP B.V. 2011. All rights reserved.
T
03aa33
T
j
j
( ° C)
( ° C)
03aa27
180
180
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