BUK9504-40A NXP Semiconductors, BUK9504-40A Datasheet - Page 9

• Manufacturer Part Number: BUK9504-40A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK9504-40A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 198 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK9504-40A,127

NXP Semiconductors
BUK9504-40A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
20
V
DD
40
= 14 V
60
80
V
(A)
I
S
DD
100
100
80
60
40
20
0
= 32 V
0
All information provided in this document is subject to legal disclaimers.
120
Q
03nd91
G
(nC)
0.2
140
Rev. 2 — 7 February 2011
T
j
= 175 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
(pF)
0.6
C
14000
12000
10000
8000
6000
4000
2000
0
as a function of drain-source voltage; typical
values
10
T
0.8
j
−2
C
= 25 °C
C
C
V
oss
rss
iss
SD
03nd90
(V)
N-channel TrenchMOS logic level FET
1.0
10
−1
BUK9504-40A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nd97
(V)
10
2
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