BUK75150-55A NXP Semiconductors, BUK75150-55A Datasheet

MOSFET Power RAIL PWR-MOS

BUK75150-55A

Manufacturer Part Number
BUK75150-55A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK75150-55A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
36 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK75150-55A,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK75150-55A
Manufacturer:
NXP
Quantity:
60 000
Part Number:
BUK75150-55A
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK75150-55A
N-channel TrenchMOS standard level FET
Rev. 03 — 4 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 5 A;
Figure
= 25 °C;
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Min
-
-
-
-
Product data sheet
Typ
-
-
-
127
Max Unit
55
11
36
150
V
A
W
mΩ

Related parts for BUK75150-55A

BUK75150-55A Summary of contents

Page 1

... BUK75150-55A N-channel TrenchMOS standard level FET Rev. 03 — 4 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET Min - - -20 Figure 1; - Figure 1 - ≤ 10 µ -55 - ° Ω ...

Page 4

... BUK75150-55A Product data sheet Limit DSon Conditions see Figure 4 vertical in still air −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET 03np24 = 10 μ 100 μ 100 (V) DS Min Typ - - - ...

Page 5

... °C j from source lead 6 mm from package to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A Min Typ Max Unit 4 0.05 10 µ 500 µ ...

Page 6

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET 200 DSon (mΩ) 160 120 Drain-source on-state resistance as a function of gate-source voltage; typical values 3 (S) 2 ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03np22 8 10 Label (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 −60 0 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances ( 175 ° ° 0.5 1 1.5 All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03np16 2 2.5 ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK75150-55A separated from data sheet BUK75_76150_55A v.2. BUK75_76150_55A v.2 20031125 (9397 750 12342) BUK75150-55A ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 4 February 2011 BUK75150-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 February 2011 Document identifier: BUK75150-55A ...

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