STL75N8LF6 STMicroelectronics, STL75N8LF6 Datasheet

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STL75N8LF6

Manufacturer Part Number
STL75N8LF6
Description
MOSFET N-CH 80V 75A POWERFLAT56
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheet

Specifications of STL75N8LF6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.4 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 4.5V
Input Capacitance (ciss) @ Vds
8900pF @ 25V
Power - Max
80W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11252-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL75N8LF6
Manufacturer:
ST
0
Part Number:
STL75N8LF6
Manufacturer:
ST
Quantity:
20 000
Features
1. The value is rated according R
Applications
Description
This device is an N-channel Power MOSFET
developed using the 6
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R
Table 1.
July 2011
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Switching applications
STL75N8LF6
Order code
DS(on)
STL75N8LF6
Order code
* Q
DS(on)
Device summary
g
industry benchmark
in all packages.
V
80 V
th
DSS
generation of STripFET™
thj-pcb
N-channel 80 V, 5.6 mΩ , 18 A, PowerFLAT™ 5x6
< 7.4 mΩ
R
max
DS(on)
STripFET™ VI DeepGATE™ Power MOSFET
DS(on)
75N8LF6
Marking
18 A
Doc ID 018820 Rev 2
I
D
(1)
Figure 1.
PowerFLAT™ (5x6)
Package
Internal schematic diagram
PowerFLAT™ (5x6)
1
4
STL75N8LF6
8
Tape and reel
Packaging
5
www.st.com
1/14
14

Related parts for STL75N8LF6

STL75N8LF6 Summary of contents

Page 1

... Device summary Order code STL75N8LF6 July 2011 STripFET™ VI DeepGATE™ Power MOSFET R DS(on max (1) < 7.4 mΩ DS(on) Figure 1. Marking 75N8LF6 PowerFLAT™ (5x6) Doc ID 018820 Rev 2 STL75N8LF6 PowerFLAT™ (5x6) Internal schematic diagram Package Packaging Tape and reel 1/14 www.st.com 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 018820 Rev 2 STL75N8LF6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL75N8LF6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (continuous (3) I Drain current (continuous (3) I Drain current (pulsed) DM (1) P Total dissipation at T TOT (3) P Total dissipation at T TOT ...

Page 4

... + Parameter Test conditions f=1 MHz 4 (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Doc ID 018820 Rev 2 STL75N8LF6 Min. Typ 125 ° 250 µ 5 Min. Typ. Max. 6895 - 516 207 = 1.52 Max. Unit V 1 µA 10 µA 100 nA ± ...

Page 5

... STL75N8LF6 Table 7. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Tc=25°C Single pulse 10ms 100ms (V) DS Figure 5. AM10318v1 (A) 200 150 100 ( temperature Figure 7. AM10320v1 R DS(on) 175 T (°C) 125 J Doc ID 018820 Rev 2 Thermal impedance Transfer characteristics = Static drain-source on resistance (mΩ) 6.5 V =10V GS 6.0 5.5 5.0 4.5 4 STL75N8LF6 AM10319v1 V (V) GS AM10321v1 I (A) D ...

Page 7

... STL75N8LF6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =40V =18A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) I =250µA D 1.10 1.00 0.90 0.80 0.70 -75 - Figure 12. Source-drain diode forward characteristics V SD (V) 0.9 0.8 0.7 0.6 0.5 0.4 0 AM10322v1 C (pF) 9000 8000 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 018820 Rev 2 STL75N8LF6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL75N8LF6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 018820 Rev 2 Package mechanical data ® 9/14 ...

Page 10

... Package mechanical data Table 9. PowerFLAT (5x6) type C mechanical data Dim 10/14 mm Min. Typ. 0.80 0.02 0.25 0.30 5.20 6.15 4.11 3.50 1.27 0.65 0.715 1.05 Doc ID 018820 Rev 2 STL75N8LF6 Max. 1.00 0.05 0.50 4.31 3.70 1.015 1.35 ...

Page 11

... STL75N8LF6 Figure 19. PowerFLAT™ (5x6) drawing Doc ID 018820 Rev 2 Package mechanical data 11/14 ...

Page 12

... Package mechanical data Figure 20. PowerFLAT™ (5x6) recommended footprint (dimensions in mm) 12/14 Doc ID 018820 Rev 2 STL75N8LF6 ...

Page 13

... STL75N8LF6 5 Revision history Table 10. Document revision history Date 11-May-2011 08-Jul-2011 Revision 1 First release. 2 Document status promoted from preliminary data to datasheet. Doc ID 018820 Rev 2 Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 018820 Rev 2 STL75N8LF6 ...

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