STL75N8LF6 STMicroelectronics, STL75N8LF6 Datasheet - Page 7

• Manufacturer Part Number: STL75N8LF6
• Description: MOSFET N-CH 80V 75A POWERFLAT56
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL75N8LF6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.4 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8900pF @ 25V
• Power - Max: 80W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11252-2

STL75N8LF6
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
(norm)
1.00
0.80
1.10
0.70
V
0.90
(V)
(V)
V
0.6
0.5
0.4
GS
0.7
0.3
10
0.8
0.9
SD
0
6
4
2
-75
8
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
2
-25
20
4
40
6
25
V
8
DD
I
I
D
D
=18A
60
=250µA
=40V
10
75
12 14 16 18
80
T
125
J
=-55°C
T
T
J
100
J
=175°C
=25°C
175
Doc ID 018820 Rev 2
AM10324v1
AM10326v1
AM10322v1
Q
I
T
SD
g
(nC)
J
(°C)
(A)
Figure 11. Normalized on resistance vs
R
C
8000
9000
7000
6000
1000
DS(on)
4000
3000
2000
(norm)
(pF)
2.3
1.8
1.3
0.8
0.3
0
-75
0.1
Capacitance variations
temperature
-25
1
V
25
GS
I
D
Electrical characteristics
=10V
=9A
10
75
125
100
175
V
DS
AM10323v1
AM10325v1
(V)
Ciss
Crss
T
Coss
J
(°C)
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