STFW60N65M5 STMicroelectronics, STFW60N65M5 Datasheet

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STFW60N65M5

Manufacturer Part Number
STFW60N65M5
Description
MOSFET N-CH TO-3PF/ISOWATT 218
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STFW60N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
59 mOhm @ 23A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
139nC @ 10V
Input Capacitance (ciss) @ Vds
6810pF @ 100V
Power - Max
79W
Mounting Type
*
Package / Case
*
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11325-5
Features
Application
Switching applications
Description
The devices are N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
May 2011
STFW60N65M5
STW60N65M5
Order codes
Worldwide best R
silicon based devices
Higher V
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
STFW60N65M5
STW60N65M5
Order codes
N-channel 650 V, 0.049 Ω , 46 A MDmesh™ V Power MOSFET
DSS
Device summary
rating
V
T
710 V
DSS
DS(on)
Jmax
@
* area amongst the
< 0.059 Ω
R
DS(on)
max
60N65M5
Marking
46 A
Doc ID 18222 Rev 2
I
D
Figure 1.
Package
TO-3PF
TO-247
TO-247
Internal schematic diagram
STFW60N65M5
1
in TO-247, TO-3PF
2
STW60N65M5
3
Packaging
TO-3PF
1 1 1
Tube
www.st.com
1
2
1/16
3
16

Related parts for STFW60N65M5

STFW60N65M5 Summary of contents

Page 1

... Table 1. Device summary Order codes STFW60N65M5 STW60N65M5 May 2011 R DS(on max 46 A Figure 1. Marking 60N65M5 Doc ID 18222 Rev 2 STW60N65M5 STFW60N65M5 in TO-247, TO-3PF TO-247 TO-3PF Internal schematic diagram Package Packaging TO-3PF Tube TO-247 1/16 www.st.com ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/ Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STFW60N65M5, STW60N65M5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not repetitive (pulse width limited by T Single pulse avalanche energy E AS (starting T ...

Page 4

... Parameter Test conditions V = 100 MHz 520 MHz open drain V = 520 (see Figure 17) Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 Min. Typ 650 =125 ° 250 µ 0.049 Min. Typ. 6810 - 141 6.2 - 480 = 140 - 139 - 34 52 while V is rising from 0 oss DS while V ...

Page 5

... STFW60N65M5, STW60N65M5 Table 6. Switching times Symbol t (v) Voltage delay time d t (v) Voltage rise time r t (i) Current fall time f t (off) Crossing time c Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time ...

Page 6

... V (V) DS Figure 7. AM09128v1 7.5V 140 7V 120 100 6. (V) DS Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 Thermal impedance for TO-3FP δ=0.5 0.2 0.1 -1 0.05 0.02 0.01 Single pulse - Thermal impedance for TO-247 Transfer characteristics I D (A) ...

Page 7

... STFW60N65M5, STW60N65M5 Figure 8. Gate charge vs gate-source voltage Figure ( =520V =23A 100 0 50 Figure 10. Capacitance variations C (pF) 10000 1000 100 Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) I =250µA 1.10 D 1.00 0.90 0.80 0.70 -50 - AM09130v1 R DS(on) (Ω) 0.057 500 0.055 400 0 ...

Page 8

... Eon including reverse recovery of a SiC diode 8/16 vs temperature Figure 15. Switching losses vs gate resistance AM09136v1 75 T (°C) 100 125 J Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 (1) E (μJ) 800 I =30A D V =400V DD 700 V =10V GS 600 500 400 300 200 100 ...

Page 9

... STFW60N65M5, STW60N65M5 3 Test circuits Figure 16. Switching times test circuit for resistive load D.U. Figure 18. Test circuit for inductive load switching and diode recovery times FAST L=100μH G D.U.T. DIODE Ω Figure 20. Unclamped inductive waveform Figure 17. Gate charge test circuit 3.3 2200 μ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/16 STFW60N65M5, STW60N65M5 Doc ID 18222 Rev 2 ® ...

Page 11

... STFW60N65M5, STW60N65M5 Table 8. TO-3PF mechanical data Dim Dia mm Min. Typ. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 5.45 15.30 9.80 10 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40 Doc ID 18222 Rev 2 Package mechanical data Max. 5.70 3.20 3.50 2.20 1 ...

Page 12

... Package mechanical data Figure 22. TO-3PF drawing 12/ Dia L2 L6 F2(3x Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 F(3x 7627132_C ...

Page 13

... STFW60N65M5, STW60N65M5 Table 9. TO-247 mechanical data Dim ∅P ∅ Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 18222 Rev 2 Package mechanical data Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14 ...

Page 14

... Package mechanical data Figure 23. TO-247 drawing 14/16 STFW60N65M5, STW60N65M5 Doc ID 18222 Rev 2 0075325_F ...

Page 15

... STFW60N65M5, STW60N65M5 5 Revision history Table 10. Document revision history Date 15-Nov-2010 05-May-2011 Revision 1 First release. 2 Document status promoted from preliminary data to datasheet. Doc ID 18222 Rev 2 Revision history Changes 15/16 ...

Page 16

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 ...

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