STFW60N65M5 STMicroelectronics, STFW60N65M5 Datasheet - Page 5

• Manufacturer Part Number: STFW60N65M5
• Description: MOSFET N-CH TO-3PF/ISOWATT 218
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STFW60N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 59 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 139nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 100V
• Power - Max: 79W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11325-5

STFW60N65M5, STW60N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
t
c
SD
d
t
RRM
RRM
r
I
Q
Q
f
(off)
SD
t
t
(v)
rr
rr
(v)
(i)
rr
rr
(2)
(1)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 18222 Rev 2
I
I
V
I
V
(see
V
R
(see
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 46 A, V
= 46 A, di/dt = 100 A/µs
= 46 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure
Figure
Test conditions
Test conditions
21)
18)
21)
GS
D
GS
j
= 150 °C
= 30 A,
= 0
= 10 V
Figure
21)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
448
534
10
45
14
52
90
11
13
16
Max. Unit
Max
184
1.5
46
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/16
A
A
V
A
A