MT47H256M4CF-3:H Micron Technology Inc, MT47H256M4CF-3:H Datasheet - Page 55

• Manufacturer Part Number: MT47H256M4CF-3:H
• Description: IC DDR2 SDRAM 1GBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M4CF-3:H

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Power and Ground Clamp Characteristics
Table 25: Input Clamp Characteristics
Figure 20: Input Clamp Characteristics
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Voltage Across Clamp (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Power and ground clamps are provided on the following input-only balls: Address balls,
bank address balls, CS#, RAS#, CAS#, WE#, ODT, and CKE.
25
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
Minimum Power Clamp Current
Voltage Across Clamp (V)
(mA)
55
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1
Power and Ground Clamp Characteristics
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
Minimum Ground Clamp Current
© 2004 Micron Technology, Inc. All rights reserved.
(mA)
11.0
13.5
16.0
18.2
21.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.1
1.0
2.5
4.7
6.8
9.1