MT47H256M4CF-3:H Micron Technology Inc, MT47H256M4CF-3:H Datasheet - Page 92

• Manufacturer Part Number: MT47H256M4CF-3:H
• Description: IC DDR2 SDRAM 1GBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M4CF-3:H

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 44: Multibank Activate Restriction
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Bank address
Command
Address
CK#
CK
Bank a
ACT
Row
T0
Note:
t RRD (MIN)
READ
Bank a
Col
T1
1. DDR2-533 (-37E, x4 or x8),
t
FAW (MIN) = 37.5ns.
Bank b
Row
ACT
T2
READ
Bank b
Col
T3
Bank c
Row
ACT
T4
92
t
CK = 3.75ns, BL = 4, AL = 3, CL = 4,
t FAW (MIN)
READ
Bank c
Col
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank d
Row
ACT
T6
1Gb: x4, x8, x16 DDR2 SDRAM
READ
Bank d
Col
T7
NOP
T8
© 2004 Micron Technology, Inc. All rights reserved.
t
RRD (MIN) = 7.5ns,
NOP
T9
ACTIVATE
Don’t Care
Bank e
Row
T10
ACT