MT18JSF51272PDZ-1G6M1 Micron Technology Inc, MT18JSF51272PDZ-1G6M1 Datasheet - Page 12

• Manufacturer Part Number: MT18JSF51272PDZ-1G6M1
• Description: MODULE DDR3 SDRAM 4GB 240RDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18JSF51272PDZ-1G6M1

• Memory Type: DDR3 SDRAM
• Memory Size: 4GB
• Speed: 1600MT/s
• Features: -
• Package / Case: 240-RDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
PDF: 09005aef83d9afa1
js-z-f18c256_512x72pdz.pdf – Rev. D 9/10 EN
V
Symbol
Symbol
IN
I
V
V
V
I
VREF
, V
I
T
VTT
T
OZ
I
DD
DD
DD
A
I
C
OUT
Parameter
V
Voltage on any pin relative to V
Parameter
V
Termination reference current from V
Termination reference voltage (DC) – command/
address bus
Input leakage current;
Any input 0V ≤ V
V
(All other pins not under test = 0V)
Output leakage current;
0V ≤ V
disabled; ODT is HIGH
V
V
(All other pins not under test = 0V)
Module ambient
operating temperature
DDR3 SDRAM component case operating tempera-
ture
DD
REF
REF
REFDQ
DD
supply voltage
supply voltage relative to V
input 0V ≤ V
supply leakage current;
OUT
Notes:
= V
≤ V
DD
/2 or V
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
DD
1. V
2. T
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
4. The refresh rate is required to double when 85°C < T
; DQ and ODT are
IN
IN
and address signals’ voltage margin and will reduce timing margins.
available on Micron’s Web site.
≤ V
≤ 0.95V
REFCA
A
TT
and T
DD
termination voltage in excess of the stated limit will adversely affect the command
;
= V
C
DD
2GB, 4GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
are simultaneous requirements.
/2
SS
SS
Address
inputs,
RAS#, CAS#,
WE#, S#,
CKE, ODT,
BA, CK, CK#
DM
DQ, DQS,
DQS#
TT
12
0.49 × V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
20mV
1.425
–600
Min
TBD
–10
–18
–4
0
0
DD
-
0.5 × V
Nom
TBD
1.5
0
0
0
–
–
–
C
Electrical Specifications
≤ 95°C.
DD
0.51 × V
Min
–0.4
–0.4
© 2010 Micron Technology, Inc. All rights reserved.
20mV
1.575
Max
+600
TBD
+70
+95
10
18
4
DD
1.975
1.975
+
Max
Units
mA
µA
µA
µA
°C
°C
V
V
Units
Notes
2, 3, 4
V
V
2, 3
1