74LVC1G66GW,165 NXP Semiconductors, 74LVC1G66GW,165 Datasheet
74LVC1G66GW,165
Specifications of 74LVC1G66GW,165
74LVC1G66GW-R
935269058165
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74LVC1G66GW,165 Summary of contents
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Bilateral switch Rev. 7 — 30 July 2010 1. General description The 74LVC1G66 provides one single pole, single-throw analog switch function. It has two input/output terminals (Y and Z) and an active HIGH enable input pin (E). When E ...
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... NXP Semiconductors Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74LVC1G66GF −40 °C to +125 °C 74LVC1G66GN −40 °C to +125 °C 74LVC1G66GS 4. Marking Table 2. Marking Type number 74LVC1G66GW 74LVC1G66GV 74LVC1G66GM 74LVC1G66GF 74LVC1G66GN 74LVC1G66GS [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. ...
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... NXP Semiconductors 6. Pinning information 6.1 Pinning 74LVC1G66 GND 001aad654 Fig 4. Pin configuration SOT353-1 and SOT753 6.2 Pin description Table 3. Pin description Symbol Pin SOT353-1, SOT753 SOT886, SOT891, SOT1115 and SOT1202 GND n. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level ...
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... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC V input voltage I I input clamping current IK I switch clamping current SK V switch voltage SW I switch current ...
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... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V HIGH-level input voltage LOW-level input voltage input leakage pin current 5 OFF-state V = 5.5 V; see S(OFF) ...
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... NXP Semiconductors 10.1 Test circuits GND GND and V = GND Fig 7. Test circuit for measuring OFF-state leakage current 10.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Symbol Parameter R ON resistance (peak) ON(peak resistance (rail) ...
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... NXP Semiconductors Table 8. ON resistance …continued At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Symbol Parameter R ON resistance ON(flat) (flatness) [1] Typical values are measured at T [2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V temperature ...
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... NXP Semiconductors (Ω (4) (3) (2) ( 0.4 0.8 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb = −40 °C. (4) T amb Fig 11. ON resistance as a function of input voltage 1 (Ω) 11 (1) 9 (2) ( 0.5 1.0 1.5 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 ° ...
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... NXP Semiconductors = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb = −40 °C. (4) T amb Fig 15. ON resistance as a function of input voltage; V 11. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see ...
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... NXP Semiconductors Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions t disable time see dis power dissipation capacitance [1] Typical values are measured the same as t and t pd PLH PHL [3] propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified capacitance when driven by an ideal voltage source (zero output impedance) ...
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... NXP Semiconductors HIGH-to-OFF OFF-to-HIGH Measurement points are given in Logic levels: V and Fig 17. Enable and disable times Table 10. Measurement points Supply voltage Input 1. 1.95 V 0.5V 2 2.7 V 0.5V 2.7 V 1 3.6 V 1 5.5 V 0.5V 74LVC1G66 Product data sheet GND t PLZ V CC ...
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... NXP Semiconductors Test data is given in Table Definitions for test circuit Termination resistance should be equal to output impedance Load capacitance including jig and probe capacitance Load resistance External voltage for measuring switching times. EXT Fig 18. Test circuit for measuring switching times Table 11. ...
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... NXP Semiconductors Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); T Symbol Parameter −3 dB frequency response f (−3dB) α isolation (OFF-state) iso V crosstalk voltage ct 74LVC1G66 Product data sheet …continued Conditions = 600 Ω pF see Figure Ω pF; see ...
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... NXP Semiconductors Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); T Symbol Parameter Q charge injection inj 11.3 Test circuits Test conditions 1. 1.4 V (p-p 2 (p-p 2.5 V (p-p 4 (p-p Fig 19. Test circuit for measuring total harmonic distortion Adjust f voltage to obtain 0 dBm level at output. Increase f i Fig 20 ...
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... NXP Semiconductors Adjust f voltage to obtain 0 dBm level at input. i Fig 21. Test circuit for measuring isolation (OFF-state) Fig 22. Test circuit for measuring crosstalk between digital input and switch = ΔV × inj O L ΔV = output voltage variation generator resistance. gen V = generator voltage. gen Fig 23. Test circuit for measuring charge injection ...
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... NXP Semiconductors 12. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT353-1 Fig 24 ...
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... NXP Semiconductors Plastic surface-mounted package; 5 leads DIMENSIONS (mm are the original dimensions) UNIT 0.100 1.1 0.40 0.26 mm 0.013 0.9 0.25 0.10 OUTLINE VERSION IEC SOT753 Fig 25. Package outline SOT753 (SC-74A) 74LVC1G66 Product data sheet scale 3.1 1.7 3.0 0.6 0.95 2.7 1.3 2 ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 27 ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
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... NXP Semiconductors 13. Abbreviations Table 13. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor TTL Transistor-Transistor Logic HBM Human Body Model ESD ElectroStatic Discharge MM Machine Model DUT Device Under Test 14. Revision history Table 14. Revision history Document ID Release date 74LVC1G66 v.7 20100730 • Modifications: Added type number 74LVC1G66GN (SOT1115/XSON6 package). • ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16. Contact information For more information, please visit: For sales office addresses, please send an email to: 74LVC1G66 Product data sheet 15 ...
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... NXP Semiconductors 17. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics 10.1 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10.2 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 ...