PSMN8R0-30YL,115 NXP Semiconductors, PSMN8R0-30YL,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN8R0-30YL,115
• Description: MOSFET Power N-Ch 30V TrenchMOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 8 ns
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 29 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064947115

NXP Semiconductors
8. Revision history
Table 7.
PSMN8R0-30YLC
Product data sheet
Document ID
PSMN8R0-30YLC v.2
Modifications:
PSMN8R0-30YLC v.1
Revision history
20110901
20110712
Release date
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
•
Data sheet status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2011
Objective data sheet
Data sheet status
Product data sheet
Change notice
-
-
PSMN8R0-30YLC
Supersedes
PSMN8R0-30YLC v.1
-
© NXP B.V. 2011. All rights reserved.
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