BUK9508-55B NXP Semiconductors, BUK9508-55B Datasheet
BUK9508-55B
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BUK9508-55B Summary of contents
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... BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... see Figure 13 Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...
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... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET Min Typ Max - - - [ [ 110 [ 439 - ...
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... Product data sheet 03nn57 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nn55 = 10 μ 100 μ ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration BUK9508-55B Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET Min Typ - - - 60 03nn56 t p δ ...
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... °C j from contact screw on mounting base to center of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1.5 ...
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... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values 120 ...
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... Fig 10. Gate-source threshold voltage as a function of 03nn53 Label 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2.0 max 1.5 typ min 1.0 0.5 0 − ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.5 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET 6000 C iss C (pF) 4000 C oss 2000 C rss 0 −2 − function of drain-source voltage; typical values 03nn47 = 25 ° ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9508-55B separated from data sheet BUK95_96_9E08 v.2. BUK95_96_9E08 v.2 20030313 (9397 750 12052) BUK9508-55B ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9508-55B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 June 2010 Document identifier: BUK9508-55B ...