BUK9508-55B NXP Semiconductors, BUK9508-55B Datasheet - Page 10

• Manufacturer Part Number: BUK9508-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9508-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 123 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9508-55B,127

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT78 (TO-220AB)
BUK9508-55B
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT
mm
VERSION
OUTLINE
SOT78
4.7
4.1
A
1.40
1.25
A
1
0.9
0.6
b
IEC
b
1.6
1.0
1
(2)
D
L
b
1.3
1.0
L
2
D
1
(2)
(1)
1
b
b
3-lead TO-220AB
(3×)
(2×)
1
2
(2)
(2)
0.7
0.4
JEDEC
c
All information provided in this document is subject to legal disclaimers.
1
16.0
15.2
REFERENCES
e
D
E
p
2
Rev. 03 — 15 June 2010
e
6.6
5.9
D
0
1
3
10.3
JEITA
SC-46
b(3×)
9.7
E
L
scale
2
q
5
(1)
2.54
e
15.0
12.8
10 mm
L
mounting
L
3.30
2.79
base
1
(1)
N-channel TrenchMOS logic level FET
max.
L
3.0
2
(1)
Q
A
3.8
3.5
p
A
PROJECTION
EUROPEAN
1
BUK9508-55B
c
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
08-04-23
08-06-13
SOT78
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