K6T0808C1D-DB70 Samsung Semiconductor, K6T0808C1D-DB70 Datasheet - Page 6

K6T0808C1D-DB70

Manufacturer Part Number
K6T0808C1D-DB70
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K6T0808C1D-DB70

Density
256Kb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
15b
Package Type
PDIP
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
60mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
28
Word Size
8b
Number Of Words
32K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
K6T0808C1D-DB70
Manufacturer:
SAMSUNG
Quantity:
5 704
Part Number:
K6T0808C1D-DB70
Manufacturer:
SAMSUN
Quantity:
4 782
K6T0808C1D Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
OE
Data out
t
HZ
levels.
interconnection.
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
HZ
(Address Controlled
OH
(WE=V
(Max.) is less than
t
AA
t
CO
IH
t
OE
)
t
AA
,
t
RC
CS=OE=V
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
)
Data Valid
t
t
OHZ
OH
t
CMOS SRAM
HZ
November 1997
Revision 1.01

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