GS8342T36AE-250 GSI TECHNOLOGY, GS8342T36AE-250 Datasheet - Page 31

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GS8342T36AE-250

Manufacturer Part Number
GS8342T36AE-250
Description
Manufacturer
GSI TECHNOLOGY
Datasheet

Specifications of GS8342T36AE-250

Density
36Mb
Access Time (max)
0.45ns
Sync/async
Synchronous
Architecture
DDR
Clock Freq (max)
250MHz
Operating Supply Voltage (typ)
1.8V
Address Bus
20b
Package Type
FBGA
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
650mA
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.9V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
165
Word Size
36b
Number Of Words
1M
Lead Free Status / Rohs Status
Not Compliant
JTAG Port Recommended Operating Conditions and DC Characteristics
JTAG Port AC Test Conditions
Notes:
1.
2.
Rev: 1.05 12/2007
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Include scope and jig capacitance.
Test conditions as shown unless otherwise noted.
Input Under/overshoot voltage must be –1 V < Vi < V
V
0 V ≤ V
Output Disable, V
The TDO output driver is served by the V
I
I
I
I
OHJ
OLJ
OHJC
OLJC
ILJ
Output reference level
Input reference level
= + 2 mA
= –2 mA
≤ V
= –100 uA
= +100 uA
Input high level
Input slew rate
Input low level
Parameter
IN
IN
TMS, TCK and TDI Input Leakage Current
TMS, TCK and TDI Input Leakage Current
≤ V
≤ V
ILJn
TDO Output Leakage Current
Test Port Output High Voltage
Test Port Output Low Voltage
DDn
Test Port Output CMOS High
Test Port Output CMOS Low
Test Port Input High Voltage
Test Port Input Low Voltage
OUT
= 0 to V
Parameter
DDn
DD
Conditions
supply.
V
DD
V
V
1 V/ns
0.2 V
DDQ
DDQ
– 0.2 V
/2
/2
DDn
31/37
+1 V not to exceed 2.9 V maximum, with a pulse width not to exceed 20% tTKC.
Symbol
V
V
V
I
V
V
I
V
I
INHJ
OHJC
INLJ
OLJC
OLJ
OHJ
OLJ
IHJ
GS8342T08/09/18/36AE-333/300/250/200/167
ILJ
V
V
DQ
DD
DD
0.6 * V
Min.
–300
– 200 mV
– 100 mV
–0.3
–1
–1
DD
* Distributed Test Jig Capacitance
JTAG Port AC Test Load
0.3 * V
V
V
100 mV
Max.
DD
DDQ
100
0.4
1
1
+0.3
/2
DD
50Ω
© 2006, GSI Technology
Unit Notes
uA
uA
uA
V
V
V
V
V
V
30pF
*
5, 6
5, 7
5, 8
5, 9
1
1
2
3
4

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