SI5856DC-T1 Vishay, SI5856DC-T1 Datasheet

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SI5856DC-T1

Manufacturer Part Number
SI5856DC-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI5856DC-T1

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Continuous Drain Current
4.4A
Power Dissipation
1.1W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
ChipFET
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5856DC-T1
Manufacturer:
LSI
Quantity:
914
Part Number:
SI5856DC-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
1 904
Notes
a.
b.
c.
Document Number: 72234
S-50366—Rev. C, 28-Feb-05
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
V
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
KA
DS
20
20
(V)
(V)
N-Channel 1.8-V (G-S) MOSFET With Schottky Diode
Diode Forward Voltage
K
0.040 @ V
0.045 @ V
0.052 @ V
1206-8 ChipFETr
K
0.375 V @ 1.0
r
J
J
DS(on)
Bottom View
= 150_C) (MOSFET)
= 150_C) (MOSFET)
V
D
Parameter
A
f
(V)
GS
GS
GS
D
A
(W)
= 4.5 V
= 2.5 V
= 1.8 V
a
a
a
a
S
1
G
Ordering Information: Si5856DC-T1
b, c
a
a
a
I
I
D
F
5.9
5.6
5.2
1.0
(A)
A
(A)
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
T
T
A
A
A
A
A
A
Marking Code
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
JD
Si5856DC-T1—E3 (Lead (Pb)-Free)
XXX
Part # Code
Symbol
Lot Traceability
and Date Code
T
J
V
V
V
I
I
P
P
, T
DM
FM
I
I
I
I
GS
DS
KA
D
D
S
F
D
D
stg
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low r
D Ultra Low V
D Si5853DC Pin Compatible
APPLICATIONS
D Buck Rectifier Switch, Buck-Boost
D Synchronous Rectifier or Load
D Switch For Portable Devices
5 sec
G
5.9
4.2
1.8
2.1
1.1
1.9
1.0
N-Channel MOSFET
DS(on)
F
−55 to 150
Schottky
D
S
260
"8
20
20
20
1.0
7
Vishay Siliconix
Steady State
0.56
4.4
3.1
0.9
1.1
0.6
1.1
Si5856DC
www.vishay.com
K
A
Available
Pb-free
Unit
_C
_C
W
W
V
V
A
A
1

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SI5856DC-T1 Summary of contents

Page 1

... Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72234 S-50366—Rev. C, 28-Feb-05 I (A) D 5.9 5.6 5.2 I (A) F 1.0 Marking Code JD XXX Lot Traceability and Date Code Part # Code Ordering Information: Si5856DC-T1 Si5856DC-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C ...

Page 2

... Si5856DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a a Junction-to-Ambient Junction-to-Foot Junction to Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current ...

Page 3

... 4 − Total Gate Charge (nC) g Document Number: 72234 S-50366—Rev. C, 28-Feb- Si5856DC Vishay Siliconix MOSFET Transfer Characteristics −55_C C 16 25_C 0.0 0.4 0.8 1.2 V − Gate-to-Source Voltage (V) GS Capacitance 800 700 600 C iss 500 400 300 200 C oss 100 C rss ...

Page 4

... Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0 250 mA D −0.0 −0.1 −0.2 −0.3 −0.4 −50 − − Temperature (_C) J www.vishay.com 25_C J 0.8 1.0 1 ...

Page 5

... Junction Temperature (_C) J Document Number: 72234 S-50366—Rev. C, 28-Feb-05 −2 − Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −2 10 Square Wave Pulse Duration (sec) 75 100 125 150 Si5856DC Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 90_C/W thJA (t) 3 ...

Page 6

... Si5856DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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