SI5856DC-T1 Vishay, SI5856DC-T1 Datasheet - Page 3

• Manufacturer Part Number: SI5856DC-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI5856DC-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 4.4A
• Power Dissipation: 1.1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 72234
S-50366—Rev. C, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
20
16
12
8
4
0
5
4
3
2
1
0
0
0
0
V
I
D
DS
V
= 4.4 A
GS
= 10 V
1
On-Resistance vs. Drain Current
1
V
4
= 1.8 V
DS
Q
Output Characteristics
V
g
− Drain-to-Source Voltage (V)
GS
I
D
− Total Gate Charge (nC)
2
= 5 thru 2 V
− Drain Current (A)
Gate Charge
2
8
3
12
3
4
1.5 V
1 V
V
GS
V
16
GS
4
= 4.5 V
5
= 2.5 V
20
5
6
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
−50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
V
I
D
−25
GS
= 4.4 A
= 4.5 V
0.4
V
4
GS
T
V
0
Transfer Characteristics
J
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
C
− Drain-to-Source Voltage (V)
oss
25
Capacitance
0.8
8
Vishay Siliconix
C
50
iss
T
C
1.2
12
25_C
= −55_C
75
Si5856DC
100
www.vishay.com
MOSFET
1.6
16
125_C
125
150
2.0
20
3