SI5856DC-T1 Vishay, SI5856DC-T1 Datasheet - Page 2

• Manufacturer Part Number: SI5856DC-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI5856DC-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 4.4A
• Power Dissipation: 1.1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Lead Free Status / Rohs Status: Not Compliant

Si5856DC
Vishay Siliconix
Notes
a.
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction to Foot
Junction-to-Foot
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS (T
Forward Voltage Drop
Forward Voltage Drop
Maximum Reverse Leakage Current
Maximum Reverse Leakage Current
Junction Capacitance
Surface Mounted on 1” x 1” FR4 Board.
Pulse test; pulse width v 300 ms, duty cycle v 2%,
Guaranteed by design, not subject to production testing.
ti
t A bi
b
Parameter
Parameter
t
a
a
a
a
a
a
Parameter
Symbol
J
Symbol
I
I
C
V
V
rm
rm
V
r
r
= 25_C UNLESS OTHERWISE NOTED)
F
F
T
I
DS(on)
DS(on)
t
t
I
GS(th)
I
I
V
D(on)
Q
Q
d(off)
GSS
d(on)
DSS
DSS
g
Q
t
SD
t
t
rr
J
fs
gs
gd
r
f
g
= 25_C UNLESS OTHERWISE NOTED)
St
Steady State
Steady State
Steady State
V
V
I
DS
DS
t
t v 5 sec
D
DS
^ 1 A, V
d St t
= 10 V, V
I
F
5
= 20 V, V
V
V
V
V
V
V
V
V
V
Test Condition
I
V
V
V
= 0.9 A, di/dt = 100 A/ms
DS
I
F
r
DS
Test Condition
DS
GS
GS
GS
S
r
DS
DD
DD
DS
= 20 V, T
= 1.0, T
= 20 V, T
= 1.0 A, V
w 5 V, V
= V
= 0 V, V
= 20 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
,
= 10 V, R
= 10 V, R
= 10 V, I
V
V
GEN
I
F
r
r
GS
GS
GS
= 20 V
= 10 V
GS
= 1.0
J
, I
= 4.5 V, R
J
Device
MOSFET
MOSFET
MOSFET
= 4.5 V, I
= 0 V, T
J
Schottky
Schottky
Schottky
= 125_C
D
GS
= 125_C
GS
D
GS
= 85_C
D
D
D
GS
= 250 mA
L
L
= 4.4 A
= "8 V
= 4.4 A
= 4.1 A
= 1.9 A
= 10 W
= 10 W
= 4.5 V
= 0 V
= 0 V
,
J
D
D
G
= 85_C
= 4.4 A
= 6 W
Symbol
R
R
R
R
thJA
thJF
Min
Min
0.4
20
Typical
50
54
90
95
30
30
0.032
0.036
0.042
0.255
Typ
Typ
0.85
0.34
0.05
0.8
22
20
36
30
12
45
10
90
5
1
2
S-50366—Rev. C, 28-Feb-05
Document Number: 72234
Maximum
110
115
"100
Max
0.040
0.045
0.052
Max
0.375
0.290
0.500
60
65
40
40
100
1.0
1.2
7.5
30
55
45
20
90
20
1
5
Unit
Unit
Unit
_C/W
_C/W
mA
mA
nA
mA
mA
nC
pF
ns
ns
V
A
W
W
S
V
V
V