SI5856DC-T1 Vishay, SI5856DC-T1 Datasheet - Page 4

• Manufacturer Part Number: SI5856DC-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI5856DC-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 4.4A
• Power Dissipation: 1.1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Lead Free Status / Rohs Status: Not Compliant

Si5856DC
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.1
−0.2
−0.3
−0.4
0.2
0.1
20
10
1
−50
0.0
Source-Drain Diode Forward Voltage
−25
0.2
V
SD
0
− Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
T
− Temperature (_C)
J
25
= 150_C
0.6
50
I
D
= 250 mA
75
0.8
0.01
100
0.1
T
10
100
1
J
0.1
= 25_C
1.0
*V
Limited
I
D(on)
125
*r
GS
DS(on)
Single Pulse
T
A
u minimum V
V
= 25_C
150
DS
1.2
Limited
Safe Operating Area
− Drain-to-Source Voltage (V)
1
BV
GS
DSS
at which r
Limited
DS(on)
10
I
DM
Limited
0.10
0.08
0.06
0.04
0.02
0.00
is specified
50
40
30
20
10
0
10
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0
−4
On-Resistance vs. Gate-to-Source Voltage
I
D
10
100
= 2 A
−3
1
V
10
GS
−2
− Gate-to-Source Voltage (V)
Single Pulse Power
I
D
Time (sec)
= 4.4 A
2
10
−1
S-50366—Rev. C, 28-Feb-05
1
Document Number: 72234
3
10
MOSFET
4
100
600
5