SI5856DC-T1 Vishay, SI5856DC-T1 Datasheet - Page 6

• Manufacturer Part Number: SI5856DC-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI5856DC-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 4.4A
• Power Dissipation: 1.1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Lead Free Status / Rohs Status: Not Compliant

Si5856DC
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?72234.
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.01
0.1
0.1
2
1
2
1
10
10
−4
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
Single Pulse
0.02
10
−3
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
600
500
400
300
200
100
−2
0
0
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
4
For related documents such as package/tape drawings, part marking, and reliability data, see
−2
10
V
KA
−1
− Reverse Voltage (V
Capacitance
8
12
1
10
−1
16
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
20
Notes:
P
DM
JM
− T
A
t
1
= P
1
t
2
DM
Z
thJA
thJA
100
t
t
(t)
1
2
S-50366—Rev. C, 28-Feb-05
= 95_C/W
Document Number: 72234
SCHOTTKY
600
10