SI5856DC-T1 Vishay, SI5856DC-T1 Datasheet - Page 5

• Manufacturer Part Number: SI5856DC-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI5856DC-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 4.4A
• Power Dissipation: 1.1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 72234
S-50366—Rev. C, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
100
0.1
10
1
0.01
0.01
−50
0.1
0.1
2
1
2
1
10
10
Reverse Current vs. Junction Temperature
−4
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
Single Pulse
J
0
20 V
− Junction Temperature (_C)
Single Pulse
25
10
−3
10 V
50
10
−3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
100
10
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
−2
10
−1
10
1
0.1
10
−1
1
0.0
T
0.1
J
= 150_C
V
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
F
P
Forward Voltage Drop
DM
0.2
− Forward Voltage Drop (V)
JM
− T
t
1
A
1
= P
t
Vishay Siliconix
2
0.3
DM
Z
thJA
thJA
100
t
t
1
2
(t)
T
0.4
= 90_C/W
Si5856DC
J
= 25_C
SCHOTTKY
www.vishay.com
MOSFET
0.5
600
10
0.6
5