IPD06N03LA

Manufacturer Part NumberIPD06N03LA
ManufacturerInfineon Technologies
TypePower MOSFET
IPD06N03LA datasheet
 


Specifications of IPD06N03LA

Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.0057Ohm
Drain-source On-volt25VGate-source Voltage (max)±20V
Continuous Drain Current50APower Dissipation83W
Operating Temp Range-55C to 175COperating Temperature ClassificationMilitary
MountingSurface MountPin Count2 +Tab
Package TypeTO-252Lead Free Status / Rohs StatusNot Compliant
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OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPD06N03LA
Package
P-TO252-3-11
Marking
06N03LA
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
4)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 2.2
Product Summary
V
DS
R
DS(on),max
1)
for target application
I
D
product (FOM)
IPF06N03LA
IPS06N03LA
P-TO252-3-23
P-TO251-3-11
06N03LA
06N03LA
Symbol Conditions
2)
I
T
=25 °C
D
C
T
=100 °C
C
3)
I
T
=25 °C
D,pulse
C
=25 Ω
E
I
=45 A, R
AS
D
GS
I
=50 A, V
=20 V,
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 °C
j,max
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPD06N03LA G
IPF06N03LA G
IPS06N03LA G
IPU06N03LA G
25
V
(SMD version)
5.7
mΩ
50
A
IPU06N03LA
P-TO251-3-1
06N03LA
Value
Unit
50
A
50
350
225
mJ
6
kV/µs
±20
V
83
W
-55 ... 175
°C
55/175/56
2008-04-14

IPD06N03LA Summary of contents

  • Page 1

    ... Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA (SMD version) 5.7 mΩ IPU06N03LA P-TO251-3-1 06N03LA Value Unit 350 225 mJ 6 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...

  • Page 2

    ... DS( SMD version SMD version |>2 DS(on)max = =1.8 K/W the chip is able to carry 94 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Values Unit min. typ. max 1.8 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 7.7 9.6 mΩ ...

  • Page 3

    ... =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Values Unit min. typ. max. - 2093 2653 pF - 800 1064 - 98 147 - 7 4.6 6.9 - 6.7 9 3.3 4.2 - 4.6 6 350 - 0.92 1 2008-04-14 ...

  • Page 4

    ... Rev. 2.2 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0. 100 10 [V] DS page 4 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 1 ...

  • Page 5

    ... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 2.2 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA =25 ° 3.5 V 3.8 V 4.1 V 3 [A] D =25 ° [A] D 100 60 2008-04-14 ...

  • Page 6

    ... Forward characteristics of reverse diode I =f parameter: T 1000 100 Crss 0.0 [V] DS page 6 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA 400 µA 40 µA - 100 140 T [° °C 175 °C, 98% 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 2.0 ...

  • Page 7

    ... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 2.2 14 Typ. gate charge V =f(Q GS parameter 100 °C 25 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA =25 A pulsed gate [nC] gate ate 2008-04-14 ...

  • Page 8

    ... Package Outline PG-TO252-3-11: Outline Rev. 2.2 IPD06N03LA G IPS06N03LA G PG-TO252-3-11 page 8 IPF06N03LA G IPU06N03LA G 2008-04-14 ...

  • Page 9

    ... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 2.2 IPD06N03LA G IPS06N03LA G PG-TO252-3-23 page 9 IPF06N03LA G IPU06N03LA G 2008-04-14 ...

  • Page 10

    ... Package Outline PG-TO251-3-11: Outline Rev. 2.2 IPD06N03LA G IPS06N03LA G PG-TO251-3-11 page 10 IPF06N03LA G IPU06N03LA G 2008-04-14 ...

  • Page 11

    ... Package Outline Rev. 2.2 IPD06N03LA G IPS06N03LA G PG-TO251-3-21 page 11 IPF06N03LA G IPU06N03LA G 2008-04-14 ...

  • Page 12

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 IPD06N03LA G IPS06N03LA G page 12 IPF06N03LA G IPU06N03LA G ...