IPD06N03LA Infineon Technologies, IPD06N03LA Datasheet - Page 5

• Manufacturer Part Number: IPD06N03LA
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD06N03LA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0057Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 50A
• Power Dissipation: 83W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Not Compliant

Rev. 2.2
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
10 V
|>2|I
1
4.5 V
D
|R
1
DS(on)max
175 °C
2
V
V
GS
DS
[V]
[V]
3
25 °C
2
4
2.8 V
3.5 V
3.8 V
4.1 V
3.2 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
20
18
16
14
12
10
80
70
60
50
40
30
20
10
D
=f(I
8
6
4
2
0
0
); T
0
0
3 V
D
j
); T
=25 °C
3.2 V
GS
10
IPS06N03LA G
j
IPD06N03LA G
=25 °C
20
3.5 V
20
40
I
I
D
D
30
3.8 V
[A]
[A]
60
40
IPU06N03LA G
IPF06N03LA G
4.1 V
80
50
4.5 V
10 V
2008-04-14
100
60