E28F008SA85 Intel, E28F008SA85 Datasheet - Page 34

• Manufacturer Part Number: E28F008SA85
• Manufacturer: Intel

Specifications of E28F008SA85

• Density: 8Mb
• Access Time (max): 85ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

28F008SA
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.10
NOTES:
1. 25 °C, 12.0 V V
2. Excludes System-Level Overhead.
3. Contact your Intel representative for information on the maximum byte write specification.
34
Block Erase Time
Block Write Time
Byte Write Time
Read timing characteristics during erase and byte write operations are the same as during read-only operations. Refer to
AC Characteristics—Read-Only Operations .
Sampled, not 100% tested.
Refer to Table 3 for valid A
Refer to Table 3 for valid D
The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard
Intel flash memory, including byte program and verify (byte write) and block precondition, precondition verify, erase and
erase verify (block erase).
Byte write and block erase durations are measured to completion (SR.7 = 1, RY/BY# = V
until determination of byte write/block erase success (SR.3/4/5 = 0)
See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing
characteristics.
See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.
Parameter
Block Erase and Byte Write Performance
PP
.
IN
IN
Notes
for byte write or block erasure.
for byte write or block erasure.
2
2
Typ
1.6
0.6
8
28F008SA-85
(1)
(Note 3)
Max
2.1
10
Typ
1.6
0.6
28F008SA-120
8
(1)
OH
). V
PRELIMINARY
(Note 3)
PP
Max
2.1
10
should be held at V
Unit
sec
sec
µs
PPH