H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 3

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
1. Description
1.1 Device Features and Ordering Information
1.2 Package Ballout / Mechanical Dimension
1.3 Row and Column Address Table: 2G
1.4 Pin Functional Description
1.5 Programming the Mode Register
1.6 Mode Register(MR0)
1.7 Mode Register(MR1)
1.8 Mode Register(MR2)
1.9 Mode Register(MR3)
1.10 Multi-Purposer Register(MPR)
1.1.1 Features
1.1.2 Ordering Information
1.2.1 x16 Package Ball out
1.6.1 Burst Length, Type and Order
1.6.2 CAS Latency
1.6.3 Test Mode
1.6.4 DLL Reset
1.6.5 Write Recovery
1.6.6 Precharge PD DLL
1.7.1 DLL Enable/Disable
1.7.2 Output Driver Impedance Control
1.7.3 ODT Rtt Values
1.7.4 Additive Latency(AL)
1.7.5 Write leveling
1.7.6 Output Disable
1.8.1 Partial Array Self-Refresh(PASR)
1.8.2 CAS Write Latency(CWL)
1.8.3 Auto SElf-Refresh(ASR) and Self-Refresh Temperature(SRT)
1.8.4 Dynamic ODT(Rtt_WR)
1.10.1 Multi Purpose Register
1.10.2 MPR Functional Description
1.10.3 MPR Register Address Definition
1.10.4 Relevant Timing Parameters
1.10.5 Protocol Example
Table of Contents
H5TQ2G63BFR
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