H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 8

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
1.3 ROW AND COLUMN ADDRESS TABLE
2Gb
Note1: Page size is the number of bytes of data delivered from the array to the internal sense amplifiers
# of Banks
Bank Address
Auto precharge
BL switch on the fly
Row Address
Column Address
Page size
page size = 2
where COLBITS = the number of column address bits, ORG = the number of I/O (DQ) bits
when an ACTIVE command is registered. Page size is per bank, calculated as follows:
Configuration
1
COLBITS
* ORG ÷ 8
128Mb x 16
BA0 - BA2
A0 - A13
A10/AP
A12/BC
A0 - A9
2 KB
8
H5TQ2G63BFR
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