H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 84

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Figure 4 - Illustration of nominal slew rate for hold time t
(for ADD/CMD with respect to clock).
Note: Clock and Strobe are drawn
Hold Slew Rate
Rising Signal
on a different time scale.
V
V
V
V
V
V
IL(dc)
IL(ac)
REF(dc)
DDQ
IH(ac)
IH(dc)
DQS
DQS
CK
CK
max
max
V
min
min
SS
=
dc to V
region
V
REF(dc)
REF
ΔTR
- V
slew rate
nominal
tDS
IL(dc)
tIS
max
tDH
tIH
Hold Slew Rate
Falling Signal
Δ
DH
TR
(for DQ with respect to strobe) and t
dc to V
region
nominal
slew rate
tIS
=
tDS
V
REF
IH(dc)
tIH
tDH
min - V
Δ
ΔTF
TF
H5TQ2G63BFR
REF(dc)
IH
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