MT46H64M16LFCK-6:ATR Micron Technology Inc, MT46H64M16LFCK-6:ATR Datasheet - Page 37

• Manufacturer Part Number: MT46H64M16LFCK-6:ATR
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H64M16LFCK-6:ATR

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 14b
• Access Time (max): 6.5/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 12: PRECHARGE Command
BURST TERMINATE
AUTO REFRESH
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Note:
BA0, BA1
The BURST TERMINATE command is used to truncate READ bursts with auto pre-
charge disabled. The most recently registered READ command prior to the BURST
TERMINATE command will be truncated, as described in READ Operation (page 57).
The open page from which the READ was terminated remains open.
AUTO REFRESH is used during normal operation of the device and is analogous to CAS#-
BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH command is
nonpersistent and must be issued each time a refresh is required.
Addressing is generated by the internal refresh controller. This makes the address bits a
“Don’t Care” during an AUTO REFRESH command.
For improved efficiency in scheduling and switching between tasks, some flexibility in
the absolute refresh interval is provided. The auto refresh period begins when the AU-
TO REFRESH command is registered and ends
Address
1. If A10 is HIGH, bank address becomes “Don’t Care.”
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
Single bank
All banks
Bank
Don’t Care
37
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
RFC later.
© 2007 Micron Technology, Inc. All rights reserved.
Commands