TS4990ID STMicroelectronics, TS4990ID Datasheet - Page 20

IC AMP AUDIO PWR 1.2W MON 8SOIC

TS4990ID

Manufacturer Part Number
TS4990ID
Description
IC AMP AUDIO PWR 1.2W MON 8SOIC
Manufacturer
STMicroelectronics
Type
Class ABr
Datasheet

Specifications of TS4990ID

Output Type
1-Channel (Mono)
Max Output Power X Channels @ Load
1.2W x 1 @ 8 Ohm
Voltage - Supply
2.2 V ~ 5.5 V
Features
Depop, Differential Inputs, Standby, Thermal Protection
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Operational Class
Class-AB
Audio Amplifier Output Configuration
1-Channel Mono
Output Power (typ)
1.2x1@8OhmW
Audio Amplifier Function
Speaker
Total Harmonic Distortion
0.2@8Ohm@1W%
Single Supply Voltage (typ)
3/5V
Dual Supply Voltage (typ)
Not RequiredV
Supply Current (max)
6@5VmA
Power Supply Requirement
Single
Unity Gain Bandwidth Product (typ)
1.5MHz
Rail/rail I/o Type
No
Power Supply Rejection Ratio
64dB
Single Supply Voltage (min)
2.2V
Single Supply Voltage (max)
5.5V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Package Type
SO
For Use With
497-6383 - BOARD DEMO FOR TS4990
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TS4990ID
Manufacturer:
ST
0
Part Number:
TS4990IDT
Manufacturer:
EMC
Quantity:
21 000
Part Number:
TS4990IDT
Manufacturer:
ST
0
Part Number:
TS4990IDT
Manufacturer:
ST
Quantity:
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Application information
Note:
4.5
20/32
Therefore, the power dissipated by each amplifier is:
and the maximum value is obtained when:
and its value is:
This maximum value is only dependent on power supply voltage and load values.
The efficiency is the ratio between the output power and the power supply:
The maximum theoretical value is reached when V
Decoupling of the circuit
Two capacitors are needed to correctly bypass the TS4990: a power supply bypass
capacitor C
C
an indirect influence on power supply disturbances. With a value for C
expect THD+N levels similar to those shown in the datasheet.
In the high frequency region, if C
on the power supply rail are less filtered.
On the other hand, if C
more filtered.
C
result of PSRR (with input grounded and in the lower frequency region).
If C
If C
to PSRR is substantial.
Note that C
of C
s
b
has particular influence on the THD+N in the high frequency region (above 7 kHz) and
has an influence on THD+N at lower frequencies, but its function is critical to the final
b
b
in
P
is lower than 1 µF, THD+N increases at lower frequencies and PSRR worsens.
is higher than 1 µF, the benefit on THD+N at lower frequencies is small, but the benefit
, the higher the PSRR.
diss
= P
in
s
and a bias voltage bypass capacitor C
has a non-negligible effect on PSRR at lower frequencies. The lower the value
supply
- P
out
s
is higher than 1 µF, those disturbances on the power supply rail are
(W)
s
P
is lower than 1 µF, it increases THD+N and disturbances
diss
η =
max
P
diss
------------------ - =
P
=
P
π
---- - = 78.5%
supply
δP
----------------- - = 0
4
δP
2V
-------------- -
out
π
diss
2
=
out
R
2
CC
2 2V
---------------------- P
L
π R
---------------------- -
πV
PEAK
4V
b
.
CC
L
PEAK
CC
(W)
= V
out
CC
P
, so:
out
s
of 1 µF, you can
TS4990

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