E28F400BVT60 Intel Corporation, E28F400BVT60 Datasheet

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E28F400BVT60

Manufacturer Part Number
E28F400BVT60
Description
Manufacturer
Intel Corporation
Datasheet

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July 1997
Intel SmartVoltage Technology
Very High-Performance Read
Low Power Consumption
x8/x16-Selectable Input/Output Bus
x8-Only Input/Output Architecture
Optimized Array Blocking Architecture
Absolute Hardware-Protection for Boot
Block
Software EEPROM Emulation with
Parameter Blocks
5V or 12V Program/Erase
2.7V, 3.3V or 5V Read Operation
Increased Programming Throughput
at 12V V
5V: 60/80/120 ns Max. Access Time,
3V: 110/150/180 ns Max Access
2.7V: 120 ns Max Access 65 ns Max.
Output Enable Time
Max 60 mA Read Current at 5V
Max 30 mA Read Current at
2.7V–3.6V
28F400 for High Performance 16- or
32-bit CPUs
28F004B for Space-Constrained
8-bit Applications
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
Three 128-KB Main Blocks
Top or Bottom Boot Locations
30/40 ns Max. Output Enable Time
65/90 ns Max. Output Enable Time
PP
SmartVoltage BOOT BLOCK FLASH
4-MBIT (256K X 16, 512K X 8)
28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B
28F400CE-T/B, 28F004BE-T/B
MEMORY FAMILY
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Extended Temperature Operation
Extended Cycling Capability
Automated Word/Byte Program and
Block Erase
SRAM-Compatible Write Interface
Automatic Power Savings Feature
Reset/Deep Power-Down Input
Hardware Data Protection Feature
Industry-Standard Surface Mount
Packaging
Footprint Upgradeable from 2-Mbit and
to 8-Mbit Boot Block Flash Memories
ETOX™ IV Flash Technology
–40°C to +85°C
100,000 Block Erase Cycles
(Commercial Temperature)
10,000 Block Erase Cycles
(Extended Temperature)
Industry-Standard Command User
Interface
Status Registers
Erase Suspend Capability
1 mA Typical I
Static Operation
0.2 µA I
Provides Reset for Boot Operations
Write Lockout during Power
Transitions
40-Lead TSOP
44-Lead PSOP: JEDEC ROM
Compatible
48-Lead TSOP
56-Lead TSOP
CC
Typical
CC
Active Current in
PRELIMINARY
Order Number: 290530-005

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E28F400BVT60 Summary of contents

Page 1

X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B 28F400CE-T/B, 28F004BE-T/B n Intel SmartVoltage Technology 5V or 12V Program/Erase 2.7V, 3. Read Operation Increased Programming Throughput at 12V ...

Page 2

... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683 or visit Intel’s Website at http:\\www.intel.com COPYRIGHT © INTEL CORPORATION, 1997 Third-party brands and names are the property of their respective owners. * CG-041493 ...

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PRODUCT FAMILY OVERVIEW .................... 5 1.1 New Features in the SmartVoltage Products ..................................................... 5 1.2 Main Features.............................................. 5 1.3 Applications ................................................. 7 1.4 Pinouts......................................................... 7 1.5 Pin Descriptions......................................... 11 2.0 PRODUCT DESCRIPTION............................ 13 2.1 Memory Blocking Organization .................. 13 ...

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SmartVoltage BOOT BLOCK FAMILY REVISION HISTORY Number -001 Initial release of datasheet. -002 Status changed from Product Preview to Preliminary 28F400CV/CE/BE references and information added throughout. 2.7V CE/BE specs added throughout. The following sections have been changed or rewritten: ...

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PRODUCT FAMILY OVERVIEW This datasheet contains the specifications for the two branches of products in the SmartVoltage 4-Mbit boot block flash memory family: the -BE/CE suffix products feature a low V operating range CC of 2.7V–3.6V; the -BV/CV suffix ...

Page 6

SmartVoltage BOOT BLOCK FAMILY For program and erase operations operation eliminates the need for in system voltage converters, while 12V V operation provides faster PP program and erase for situations where 12V is available, such as manufacturing ...

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Applications The 4-Mbit boot block flash memory family combines high-density, low-power, performance, cost-effective flash memories with blocking and hardware protection capabilities. Their flexibility and versatility reduce costs throughout the product life cycle. Flash memory is ideal for Just-In- Time ...

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SmartVoltage BOOT BLOCK FAMILY A[18:1] CS# RD# WR# i386™ EX CPU (25 MHz) D[0:15] RESET RESET NOTE: A data bus buffer may be needed for processor speeds above 25 MHz. Figure 1. 28F400 Interface to Intel386™ EX Microprocessor A[16:18] ...

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...

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SmartVoltage BOOT BLOCK FAMILY 28F800 28F200 ...

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Pin Descriptions Table 2. 28F400/004 Pin Descriptions Symbol Type ADDRESS INPUTS for memory addresses. Addresses are internally latched A –A INPUT 0 18 during a write cycle. The 28F400 only has A has A – ...

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SmartVoltage BOOT BLOCK FAMILY Table 2. 28F400/004 Pin Descriptions (Continued) Symbol Type WP# INPUT WRITE PROTECT: Provides a method for unlocking the boot block in a system without a 12V supply. When WP logic low, the boot ...

Page 13

PRODUCT DESCRIPTION 2.1 Memory Blocking Organization This product family features an asymmetrically- blocked architecture providing system memory integration. Each erase block can be erased independently of the others up to 100,000 times for commercial temperature 10,000 ...

Page 14

SmartVoltage BOOT BLOCK FAMILY 28F400-T 3FFFFH 16-Kbyte BOOT BLOCK 3E000H 8-Kbyte PARAMETER BLOCK 3DFFFH 3D000H 8-Kbyte PARAMETER BLOCK 3CFFFH 3C000H 3BFFFH 96-Kbyte MAIN BLOCK 30000H 2FFFFH 128-Kbyte MAIN BLOCK 20000H 1FFFFH 128-Kbyte MAIN BLOCK 10000H 0FFFFH 128-Kbyte MAIN BLOCK ...

Page 15

PRODUCT FAMILY PRINCIPLES OF OPERATION Flash memory combines EPROM functionality with in-circuit electrical write and erase. The boot block flash family utilizes a Command User Interface (CUI) and automated algorithms to simplify write and erase operations. The CUI allows ...

Page 16

SmartVoltage BOOT BLOCK FAMILY Table 3. Bus Operations for Word-Wide Mode (BYTE Mode Notes RP# Read 1,2 Output Disable V IH Standby V IH Deep Power-Down Intelligent Identifier (Mfr) ...

Page 17

INTELLIGENT IDENTIFIERS To read the manufacturer and device codes, the device must be in intelligent identifier read mode, which can be reached using two methods: by writing the intelligent identifier command (90H taking the A pin to ...

Page 18

SmartVoltage BOOT BLOCK FAMILY Table 6. Command Codes and Descriptions Code Device Mode 00 Invalid/ Unassigned commands that should not be used. Intel reserves the right to redefine Reserved these codes for future functions. FF Read Array Places the ...

Page 19

Table 6. Command Codes and Descriptions (Continued) Code Device Mode 50 Clear Status The WSM can only set the Program Status and Erase Status bits in the Status Register Register to “1;” it cannot clear them to “0.” The Status ...

Page 20

SmartVoltage BOOT BLOCK FAMILY Table 8. Status Register Bit Definition WSMS ESS SR.7 =WRITE STATE MACHINE STATUS 1 = Ready (WSMS Busy SR.6 = ERASE-SUSPEND STATUS (ESS Erase Suspended 0 = ...

Page 21

Clearing the Status Register The WSM sets status bits 3 through 7 to “1,” and clears bits 6 and 7 to “0,” but cannot clear status bits 3 through 5 to “0.” Bits 3 through 5 can only be ...

Page 22

SmartVoltage BOOT BLOCK FAMILY 3.3.4.1 Suspending and Resuming Erase Since an erase operation requires on the order of seconds to complete, an Erase Suspend command is provided to allow erase-sequence interruption in order to read data from another block ...

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Start Write 40H, Word/Byte Address Write Word/Byte Data/Address Read Status Register NO SR YES Full Status Check if Desired Word/Byte Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 1 SR.3= V Range Error ...

Page 24

SmartVoltage BOOT BLOCK FAMILY Start Write 20H, Block Address Write D0H and Block Address Read Status Register Suspend Erase Loop NO 0 YES Suspend SR.7 = Erase 1 Full Status Check if Desired Block Erase Complete FULL STATUS CHECK ...

Page 25

Start Write B0H Read Status Register 0 SR Erase Completed CSR Write FFH Read Array Data NO Done Reading YES Write D0H Write FFH Erase Resumed Read Array Data Figure 11. Erase Suspend/Resume Flowchart PRELIMINARY ...

Page 26

SmartVoltage BOOT BLOCK FAMILY 3.5 Power Consumption 3.5.1 ACTIVE POWER With CE logic-low level and RP logic- high level, the device is placed in the active mode. Refer to the DC Characteristics table for I ...

Page 27

AND RP# TRANSITIONS CC PP The CUI latches commands as issued by system software and is not altered transitions or WSM actions. Its default state upon power-up, after exit from deep power-down mode, ...

Page 28

SmartVoltage BOOT BLOCK FAMILY 4.0 ABSOLUTE MAXIMUM RATINGS* Commercial Operating Temperature During Read .................................0°C to +70°C During Block Erase and Word/Byte Program ...............0°C to +70°C Temperature Bias.....................–10°C to +80°C Extended Operating Temperature During Read .............................–40°C to +85°C During Block ...

Page 29

COMMERCIAL OPERATING CONDITIONS Table 10. Commercial Temperature and V Symbol Parameter T Operating Temperature A V 3.3V V Supply Voltage (± 0.3V Supply Voltage (10 Supply Voltage (5%) CC NOTES: 1. 10% ...

Page 30

SmartVoltage BOOT BLOCK FAMILY 5.2 DC Characteristics Table 11. DC Characteristics (Commercial) Prod Sym Parameter V CC Note I Input Load Current Output Leakage Current Standby Current 1,3 CC CCS I V ...

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Table 11. DC Characteristics (Commercial) (Continued) Prod Sym Parameter V CC Note V Erase Suspend CC I 1,2 CCES Current I V Standby Current 1 PP PPS V Deep Power-Down PPD Current I V Read Current 1 ...

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SmartVoltage BOOT BLOCK FAMILY Table 11. DC Characteristics (Commercial) (Continued) Prod Sym Parameter Note V A Intelligent Identifier 9 ID Voltage V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage Output ...

Page 33

INPUT 1.5 0.0 NOTE: AC test inputs are driven at 3.0V for a logic “1” and 0.0V for a logic “0.” Input timing begins, and output timing ends, at 1.5V. Input rise and fall times (10% to 90%) <10 ...

Page 34

SmartVoltage BOOT BLOCK FAMILY 5.3 AC Characteristics Table 13. AC Characteristics: Read Only Operations (Commercial) Prod Sym Parameter V CC Load Note t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay 2 ...

Page 35

Table 13. AC Characteristics: Read Only Operations (Commercial) (Continued) Sym Parameter V CC Load Notes t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay 2 ELQV t RP# to Output Delay PHQV t ...

Page 36

SmartVoltage BOOT BLOCK FAMILY Device and Address Selection V IH ADDRESSES (A) Address Stable CE# ( OE# ( WE# ( High Z DATA ...

Page 37

Table 14. AC Characteristics: WE#–Controlled Write Operations Sym Parameter t Write Cycle Time AVAV t RP# Setup to WE# Going Low PHWL t CE# Setup to WE# Going Low ELWL t Boot Block Lock Setup to WE# PHHWH Going High ...

Page 38

SmartVoltage BOOT BLOCK FAMILY Table 14. AC Characteristics: WE#–Controlled Write Operations Prod Sym Parameter V CC Load Notes t Write Cycle Time AVAV t RP# Setup to WE# Going PHWL Low t CE# Setup to WE# Going ELWL Low ...

Page 39

NOTES: 1. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC characteristics during read mode. 2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally which includes ...

Page 40

SmartVoltage BOOT BLOCK FAMILY Table 15. AC Characteristics: CE#–Controlled Write Operations Sym Parameter t Write Cycle Time AVAV t RP# High Recovery to CE# PHEL Going Low t WE# Setup to CE# Going Low WLEL t Boot Block Lock ...

Page 41

Table 15. AC Characteristics: CE#–Controlled Write Operations Prod Sym Parameter V CC Load Notes t Write Cycle Time AVAV t RP# High Recovery to PHEL CE# Going Low t WE# Setup to CE# Going WLEL Low 6,8 t Boot Block ...

Page 42

SmartVoltage BOOT BLOCK FAMILY NOTES: See WE# Controlled Write Operations for notes 1 through 11. 12. Chip-Enable controlled writes: write operations are driven by the valid combination of CE# and WE# in systems where CE# defines the write pulse-width ...

Page 43

Table 16. Erase and Program Timings (Commercial Parameter Boot/Parameter Block Erase Time Main Block Erase Time Main Block Program Time (Byte) Main Block Program Time (Word) Byte Program Time (4) Word Program Time (4) NOTES: ...

Page 44

SmartVoltage BOOT BLOCK FAMILY 6.0 EXTENDED OPERATING CONDITIONS Table 17. Extended Temperature and V Symbol Parameter T Operating Temperature A V 2.7V–3.6V V Supply Voltage CC CC 3.3V V Supply Voltage (± 0.3V Supply Voltage (10%) ...

Page 45

DC Characteristics Table 18. DC Characteristics: Extended Temperature Operation Prod TBE-120 Sym Parameter V 2.7V–3.6V CC Notes Typ Max I Input Load 1 ± 1.0 IL Current I Output 1 ± Leakage Current V I 1,3 50 ...

Page 46

SmartVoltage BOOT BLOCK FAMILY Table 18. DC Characteristics: Extended Temperature Operation (Continued) Prod TBE-120 Sym Parameter V 2.7V–3.6V CC Notes Typ Max CCW Program Current for Word Byte V Erase ...

Page 47

Table 18. DC Characteristics: Extended Temperature Operation (Continued) Prod TBE-120 Sym Parameter V 2.7V–3.6V CC Notes Typ Max V Erase I 1 PPE Current Erase 200 PP PPES Suspend Current I ...

Page 48

SmartVoltage BOOT BLOCK FAMILY Table 18. DC Characteristics: Extended Temperature Operation (Continued) Prod TBE-120 Sym Parameter V 2.7V–3.6V CC Notes Min Max A V 11.4 12 Intelligent Identifier Voltage V Input Low –0.5 0.8 IL Voltage V ...

Page 49

Table 19. Capacitance (T Symbol Parameter Note C Input Capacitance Output Capacitance 4 OUT NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at V product versions (packages and speeds specified ...

Page 50

SmartVoltage BOOT BLOCK FAMILY 2.7 INPUT 1.35 0.0 NOTE: AC test inputs are driven at 2.7V for a logic “1” and 0.0V for a logic “0.” Input timing begins, and output timing ends, at 1.35V. Input rise and fall ...

Page 51

AC Characteristics Table 20. AC Characteristics: Read Only Operations Sym Parameter t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay ELQV t RP# to Output Delay PHQV t OE# to Output Delay ...

Page 52

SmartVoltage BOOT BLOCK FAMILY Table 21. AC Characteristics: WE#-Controlled Write Operations Sym Parameter t Write Cycle Time AVAV t RP# High Recovery to WE# PHWL Going Low t CE# Setup to WE# Going Low ELWL t Boot Block Lock ...

Page 53

NOTES: 1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC Characteristics during read mode. 2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally which includes ...

Page 54

SmartVoltage BOOT BLOCK FAMILY Table 22. AC Characteristics: CE#–Controlled Write Operations Sym Parameter t Write Cycle Time AVAV t RP# High Recovery to CE# PHEL Going Low t WE# Setup to CE# Going Low WLEL t Boot Block Lock ...

Page 55

Table 23. Erase and Program Timings (Extended T 5V ± 10 2.7V–3.6V 3.3 ± 0. Parameter Typ Max Typ Boot/Parameter 0.88 7 0.84 Block Erase Time Main Block 2.5 14 2.4 Erase Time Main Block 1.87 ...

Page 56

... TSOP PSOP TSOP TSOP PRELIMINARY Access Speed(ns) BV/CV BE/CE 2. Top Boot B = Bottom Boot Voltage Options ( 3 2 Architecture B = Boot Block C = Compact 48-Lead TSOP Boot Block 0530_23 56-Lead TSOP E28F400BVT60 E28F400BVB60 E28F400BVT80 E28F400BVB80 TE28F400BVT80 TE28F400BVB80 0°C – –40°C – +70°C +85°C ...

Page 57

ADDITIONAL INFORMATION RELATED INTEL INFORMATION Order Number 290599 Smart 5 Boot Block Flash Memory Family Mbit Datasheet 292194 AB-65 Migrating Designs from SmartVoltage Boot Block to Smart 5 Flash 292154 AB-60 2/4/8-Mbit SmartVoltage Boot Block Flash Memory ...

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