E28F016S5-120 Intel Corporation, E28F016S5-120 Datasheet

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E28F016S5-120

Manufacturer Part Number
E28F016S5-120
Description
Byte-wide smart 5 FlashFile memory 16 Mbit. Access speed 120 ns
Manufacturer
Intel Corporation
Datasheet

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E28F016S5-120
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Intel’s byte-wide Smart 5 FlashFile™ memory family renders a variety of density offerings in the same
package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile,
read/write storage solutions for a wide range of applications. Their symmetrically-blocked architecture, flexible
voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs,
and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage
applications. For secure code storage applications, such as networking, where code is either directly
executed out of flash or downloaded to DRAM, the 4-, 8-, and 16-Mbit FlashFile memories offer three levels
of protection: absolute protection with V
block locking. These alternatives give designers ultimate control of their code security needs.
This family of products is manufactured on Intel’s 0.4 m ETOX™ V process technology. They come in
industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged
44-lead PSOP. Based on the 28F008SA architecture, the byte-wide Smart 5 FlashFile memory family
enables quick and easy upgrades for designs that demand state-of-the-art technology.
June 1997
SmartVoltage Technology
High-Performance
Enhanced Data Protection Features
Enhanced Automated Suspend Options
Industry-Standard Packaging
Smart 5 Flash: 5V V
12V V
4, 8 Mbit: 85 ns Read Access Time
16 Mbit: 95 ns Read Access Time
Absolute Protection with V
Flexible Block Locking
Block Write Lockout during Power
Transitions
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
40-Lead TSOP, 44-Lead PSOP
PP
Includes Commercial and Extended Temperature Specifications
SMART 5 FlashFile™ MEMORY FAMILY
CC
and 5V or
28F004S5, 28F008S5, 28F016S5
4, 8, AND 16 MBIT
PP
PP
= GND
BYTE-WIDE
at GND, selective hardware block locking, or flexible software
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High-Density 64-Kbyte Symmetrical
Erase Block Architecture
Extended Cycling Capability
Low Power Management
Automated Program and Block Erase
SRAM-Compatible Write Interface
ETOX™ V Nonvolatile Flash
Technology
4 Mbit: Eight Blocks
8 Mbit: Sixteen Blocks
16 Mbit: Thirty-Two Blocks
100,000 Block Erase Cycles
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
Command User Interface
Status Register
PRODUCT PREVIEW
CC
in Static Mode
Order Number: 290597-003

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E28F016S5-120 Summary of contents

Page 1

SMART 5 FlashFile™ MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S5, 28F008S5, 28F016S5 Includes Commercial and Extended Temperature Specifications n SmartVoltage Technology Smart 5 Flash and 12V High-Performance 4, 8 Mbit: 85 ...

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... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683 or visit Intel’s Website at http:\\www.intel.com COPYRIGHT © INTEL CORPORATION, 1997 Third-party brands and names are the property of their respective owners * CG-041493 ...

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INTRODUCTION .............................................5 1.1 New Features...............................................5 1.2 Product Overview.........................................5 1.3 Pinout and Pin Description ...........................6 2.0 PRINCIPLES OF OPERATION .......................9 2.1 Data Protection ..........................................10 3.0 BUS OPERATION .........................................10 3.1 Read ..........................................................10 3.2 Output Disable ...........................................10 3.3 Standby......................................................10 3.4 Deep Power-Down ...

Page 4

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY REVISION HISTORY Number -001 Original version -002 Table 3 revised to reflect change in abbreviations from “W” for write to “P” for program. Ordering information graphic (Appendix A) corrected: from PB = Ext. Temp. ...

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INTRODUCTION This datasheet contains 4-, 8-, and 16-Mbit Smart 5 FlashFile memory specifications. Section provides a flash memory overview. Sections and 5 describe the memory organization and functionality. Section 6 covers specifications for commercial and temperature ...

Page 6

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY To protect programmed data, each block can be locked. This block locking mechanism uses a combination of bits, block lock-bits and a master lock-bit, to lock and unlock individual blocks. The block lock-bits gate ...

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Table 1. Pin Descriptions Sym Type A –A INPUT ADDRESS INPUTS: Inputs for addresses during read and write operations Addresses are internally latched during a write cycle. 4 Mbit 8 Mbit 16 Mbit DQ –DQ INPUT/ DATA INPUT/OUTPUTS: ...

Page 8

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY ...

Page 9

PRINCIPLES OF OPERATION The byte-wide Smart 5 FlashFile memories include an on-chip WSM to manage block erase, program, and lock-bit configuration functions. It allows for: 100% TTL-level control inputs, fixed power supplies during block erasure, program, and configuration, and ...

Page 10

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 2.1 Data Protection Depending on the application, the system designer may choose to make the V power supply PP switchable (available only when memory block erases, programs, or lock-bit configurations are required) or hardwired ...

Page 11

Block 31 Reserved for Future Implementation 1F0002 Block 31 Lock Configuration Reserved for Future Implementation 1F0000 (Blocks 16 through 30) 0FFFFF Block 15 Reserved for Future Implementation Block 15 Lock Configuration 0F0002 Reserved for Future Implementation 0F0000 (Blocks 8 ...

Page 12

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY Table 2. Bus Operations Mode Notes RP# Read 1,2 Output Disable Standby Deep Power-Down ...

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Table 3. Command Definitions Bus Cycles Command Req’d. Read Array/Reset 1 Read Identifier Codes 2 Read Status Register 2 Clear Status Register 1 Block Erase 2 Program 2 Block Erase and Program 1 Suspend Block Erase and Program 1 Resume ...

Page 14

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 4.1 Read Array Command Upon initial device power-up and after exit from deep power-down mode, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The ...

Page 15

When the block erase is complete, status register bit SR.5 should be checked block erase error is detected, the status register should be cleared before system software attempts corrective actions. The CUI remains in read status register mode ...

Page 16

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 4.8 Program Suspend Command The Program Suspend command allows program interruption to read data in other flash memory locations. Once the program process starts, writing the Program Suspend command requests that the WSM suspend ...

Page 17

Clear Block Lock-Bits Command All set block lock-bits are cleared in parallel via the Clear Block Lock-Bits command. With the master lock-bit not set, block lock-bits can be cleared using only the Clear Block Lock-Bits command. If the master ...

Page 18

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY Table 6. Status Register Definition WSMS ESS ECLBS SR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy SR.6 = ERASE SUSPEND STATUS 1 = Block Erase Suspended 0 ...

Page 19

Start Write 20H, Block Address Write D0H, Block Address Read Status Register Suspend Block Erase Loop No 0 Suspend SR.7 = Block Erase Yes 1 Full Status Check if Desired Block Erase Complete FULL STATUS CHECK PROCEDURE Read Status Register ...

Page 20

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY Start Write 40H, Address Write Byte Data and Address Read Status Register Suspend Program Loop No 0 Suspend SR.7 = Program 1 Full Status Check if Desired Program Complete FULL STATUS CHECK PROCEDURE Read ...

Page 21

Start Write B0H Read Status Register 0 SR SR.6 = Block Erase Completed 1 Read Program Read or Program ? Program Read Array No Loop Data Done? Yes Write D0H Write FFH Block Erase Resumed Read Array ...

Page 22

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY Start Write B0H Read Status Register 0 SR Program Completed SR Write FFH Read Array Data No Done Reading Yes Write D0H Write FFH Program Resumed Read Array Data ...

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Start Write 60H, Block/Device Address Write 01H/F1H, Block/Device Address Read Status Register 0 SR Full Status Check if Desired Set Lock-Bit Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above Range Error ...

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BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY Start Write 60H Write D0H Read Status Register 0 SR Full Status Check if Desired Clear Block Lock-Bits Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 1 SR.3 = ...

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DESIGN CONSIDERATIONS 5.1 Three-Line Output Control Intel provides three control inputs to accommodate multiple memory connections: CE#, OE#, and RP#. Three-line control provides for: a. Lowest possible memory power dissipation. b. Data bus contention avoidance. To use these control ...

Page 26

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 6.0 ELECTRICAL SPECIFICATIONS 6.1 Absolute Maximum Ratings* Temperature under Bias .................–10°C to +80°C Storage Temperature....................–65°C to +125°C Voltage On Any Pin (except V and RP#)............–2.0V to +7.0V PP, V Voltage ............................. –2.0V to +14.0V ...

Page 27

AC INPUT/OUTPUT TEST CONDITIONS 3.0 INPUT 1.5 0.0 AC test inputs are driven at 3.0V for a Logic "1" and 0.0V for a Logic "0." Input timing begins, and output timing ends, at 1.5V. Input rise and fall times ...

Page 28

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 6.2.3 COMMERCIAL TEMPERATURE DC CHARACTERISTICS Commercial Temperature DC Characteristics for 4-, 8-, and 16-Mbit Smart 5 FlashFile™ Memories Sym Parameter Notes I Input Load Current Output Leakage Current ...

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Commercial Temperature DC Characteristics for 4-, 8-, and 16-Mbit Smart 5 FlashFile™ Memories (Continued) Sym Parameter Notes V Input Low Voltage Input High Voltage Output Low Voltage 3 Output High Voltage 3,7 ...

Page 30

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 6.2.4 COMMERCIAL TEMPERATURE AC CHARACTERISTICS - READ-ONLY OPERATIONS Commercial Temperature Read-Only Operations for 4-, 8-, and 16-Mbit Smart 5 FlashFile™ Memories at T Versions (4) # Sym Parameter R1 t Read Cycle Time 4, ...

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Standby V IH ADDRESSES ( CE# ( OE# ( WE# ( DATA (D/Q) High Z (DQ0-DQ7 RP# (P) ...

Page 32

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 6.2.6 COMMERCIAL TEMPERATURE AC CHARACTERISTICS - WRITE OPERATIONS Commercial Temperature Write Operations for 4-, 8-, and 16-Mbit Smart 5 FlashFile™ Memories at T Versions (4) # Sym RP# High Recovery ...

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ADDRESSES [ CE# (WE#) [E(W OE# [ WE# (CE#) [W(E High Z DATA ...

Page 34

BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY 6.2.7 COMMERCIAL TEMPERATURE BLOCK ERASE, PROGRAM, AND LOCK-BIT CONFIGURATION PERFORMANCE ± 0.5V, 5V ± 0.25V Sym Parameter W16 t Program Time WHRH1 t EHRH1 Block Program Time W16 ...

Page 35

Extended Temperature Operating Conditions Except for the specifications given in this section, all DC and AC characteristics are identical to those give in commercial temperature specifications. See the Section 6.2 for commercial temperature specifications. Extended Temperature and V Symbol ...

Page 36

... Access Speed (ns (5V (5V) Voltage Options ( Smart 5 Flash ( and 12V) Product Family S = FlashFile™ Memory Valid Operational 10 Mbit 100 pF load E28F016S5-95 –90/–100 E28F016S5-120 –120 PA28F016S5-95 –90/–100 PA28F016S5-120 –120 Extended Temperature TE28F016S5-110 –100/–110 TB28F016S5-110 –100/–110 PRODUCT PREVIEW / ...

Page 37

ADDITIONAL INFORMATION Order Number 290598 Byte-Wide Smart 3 FlashFile™ Memory Family Datasheet 290600 Byte-Wide SmartVoltage FlashFile™ Memory Family Datasheet 292183 AB-64 4-, 8-, 16-Mbit Byte-Wide FlashFile™ Memory Family Overview 292094 AP-359 28F008SA Hardware Interfacing 292099 AP-364 28F008SA Automation and Algorithms ...

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