DA28F016XS-25

Manufacturer Part NumberDA28F016XS-25
Description16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels
ManufacturerIntel Corporation
DA28F016XS-25 datasheet
 


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16-MBIT (1 MBIT x 16, 2 MBIT x 8)
SYNCHRONOUS FLASH MEMORY
n
Effective Zero Wait-State Performance
up to 33 MHz
Synchronous Pipelined Reads
n
SmartVoltage Technology
User-Selectable 3.3V or 5V V
User-Selectable 5V or 12V V
PP
n
0.33 MB/sec Write Transfer Rate
n
Configurable x8 or x16 Operation
n
56-Lead TSOP and SSOP Type I
Package
Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining very high read performance with the intrinsic
nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of
shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for
improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-
execute code and mass storage data/file flash memory systems.
The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution
available today. Its synchronous pipelined read interface, flexible V
fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a
highly flexible memory component suitable for resident flash component arrays on the system board or
SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface
with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read
performance up to 33 MHz. The 28F016XS’s dual read voltage allows the same component to operate at
either 3.3V or 5.0V V
. Programming voltage at 5V V
CC
critical designs, while the 12.0V V
option maximizes program/erase performance. Its high read performance
PP
combined with flexible block locking enable both storage and execution of operating systems/application
software and fast access to large data tables. The 28F016XS is manufactured on Intel’s 0.6 µm ETOX IV
process technology.
November 1996
28F016XS
n
Backwards-Compatible with 28F008SA
Command-Set
n
2 µA Typical Deep Power-Down
n
1 mA Typical Active I
CC
Static Mode
n
16 Separately-Erasable/Lockable
128-Kbyte Blocks
n
1 Million Erase Cycles per Block
n
State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
and V
voltages, extended cycling,
CC
PP
minimizes external circuitry in minimal-chip, space
PP
Current in
CC
Order Number: 290532-004

DA28F016XS-25 Summary of contents