IRF421 Intersil Corporation, IRF421 Datasheet

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IRF421

Manufacturer Part Number
IRF421
Description
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs
Manufacturer
Intersil Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF421
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF421
Manufacturer:
RCA
Quantity:
5
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 2.2A and 2.5A, 450V and 500V
• r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Ordering Information
NOTE: When ordering, use the entire part number.
Packaging
IRF420
IRF421
IRF422
IRF423
- TB334 “Guidelines for Soldering Surface Mount
PART NUMBER
DS(ON)
Components to PC Boards”
©
Harris Corporation 1998
Semiconductor
= 3.0 and 4.0
TO-204AA
TO-204AA
TO-204AA
TO-204AA
PACKAGE
DRAIN
(FLANGE)
IRF420
IRF421
IRF422
IRF423
GATE (PIN 1)
BRAND
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
JEDEC TO-204AA
5-1
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17405.
Symbol
IRF420, IRF421,
SOURCE (PIN 2)
IRF422, IRF423
N-Channel Power MOSFETs
G
D
S
File Number
1571.3

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IRF421 Summary of contents

Page 1

... Packaging CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. © Copyright Harris Corporation 1998 IRF420, IRF421, IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specifi ...

Page 2

... Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge IRF420, IRF421, IRF422, IRF423 Unless Otherwise Specified IRF420 IRF421 500 DS 500 DGR 2 ...

Page 3

... Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3 50V, starting 60mH IRF420, IRF421, IRF422, IRF423 o C, Unless Otherwise Specified (Continued) SYMBOL TEST CONDITIONS 25V 0V 1MHz, (Figure 11) ...

Page 4

... IRF420 MAX RATED J IRF421/3 SINGLE PULSE 0 DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 4. FORWARD BIAS SAFE OPERATING AREA IRF420, IRF421, IRF422, IRF423 Unless Otherwise Specified C 2.5 2.0 1.5 1.0 0.5 0 100 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ...

Page 5

... VOLTAGE AND DRAIN CURRENT 1. 250 A D 1.15 1.05 0.95 0.85 0.75 -60 -40 - JUNCTION TEMPERATURE ( J FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE IRF420, IRF421, IRF422, IRF423 Unless Otherwise Specified (Continued 50V 10V PULSE TEST 5.5V GS ...

Page 6

... J 0 0.8 1.6 2 DRAIN CURRENT (A) D FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE IRF420, IRF421, IRF422, IRF423 Unless Otherwise Specified (Continued PULSE DURATION = 0.1 3.2 4.0 0 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ...

Page 7

... FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. SWITCHING TIME TEST CIRCUIT CURRENT REGULATOR 12V 0.2 F 50k BATTERY 0 G(REF CURRENT G SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT IRF420, IRF421, IRF422, IRF423 DUT 0.01 FIGURE 16. UNCLAMPED ENERGY WAVEFORMS t d(ON 90 ...

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