BSM100GB120DN2K

Manufacturer Part NumberBSM100GB120DN2K
DescriptionIGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
ManufacturerSiemens Semiconductor Group
BSM100GB120DN2K datasheet
 


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IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GB 120 DN2K
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, t
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
V
I
Package
CE
C
1200V 145A
HALF-BRIDGE 1
Symbol
V
CE
V
CGR
V
GE
I
C
= 1 ms
I
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
1
BSM 100 GB 120 DN2K
Ordering Code
C67070-A2107-A70
Values
Unit
1200
V
1200
± 20
A
145
100
290
200
W
700
+ 150
°C
-55 ... + 150
0.18
K/W
0.36
2500
Vac
20
mm
11
F
-
55 / 150 / 56
Mar-29-1996

BSM100GB120DN2K Summary of contents

  • Page 1

    IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ...

  • Page 2

    Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 100 ...

  • Page 3

    Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 6.8 Gon Rise time V = 600 ...

  • Page 4

    Power dissipation tot C parameter: T 150 °C j 750 W P 600 tot 550 500 450 400 350 300 250 200 150 100 Collector current I = ...

  • Page 5

    Typ. output characteristics parameter µ ° 200 A 17V 15V 160 I 13V C 11V 140 9V 7V 120 100 ...

  • Page 6

    Typ. gate charge Gate parameter 100 A C puls 600 100 200 300 Reverse biased safe operating ...

  • Page 7

    Typ. switching time inductive load , T = 125° par 600 ± ...

  • Page 8

    Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 200 A 160 I F 140 120 T =125°C j 100 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal ...

  • Page 9

    Package Outlines Dimensions in mm Weight: 250 g Semiconductor Group Circuit Diagram 9 BSM 100 GB 120 DN2K Mar-29-1996 ...