BSM150GB120DN2

Manufacturer Part NumberBSM150GB120DN2
DescriptionIGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
ManufacturerSiemens Semiconductor Group
BSM150GB120DN2 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 1/9

Download datasheet (132Kb)Embed
Next
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 150 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, t
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
V
I
Package
CE
C
1200V 210A
HALF-BRIDGE 2
Symbol
V
CE
V
CGR
V
GE
I
C
I
= 1 ms
p
Cpuls
P
tot
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
1
BSM 150 GB 120 DN2
Ordering Code
C67076-A2108-A70
Values
Unit
1200
V
1200
± 20
A
210
150
420
300
W
1250
+ 150
°C
-55 ... + 150
0.1
K/W
0.25
2500
Vac
20
mm
11
F
-
55 / 150 / 56
Mar-28-1996

BSM150GB120DN2 Summary of contents

  • Page 1

    IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ...

  • Page 2

    Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 150 ...

  • Page 3

    Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 5.6 Gon Rise time V = 600 ...

  • Page 4

    Power dissipation tot C parameter: T 150 °C j 1300 W 1100 P tot 1000 900 800 700 600 500 400 300 200 100 Collector current ...

  • Page 5

    Typ. output characteristics parameter µ ° 300 A 17V 15V I 240 13V C 11V 220 9V 7V 200 180 160 140 120 100 80 ...

  • Page 6

    Typ. gate charge Gate parameter 150 A C puls 600 200 400 600 Reverse biased safe operating ...

  • Page 7

    Typ. switching time inductive load , T = 125° par 600 ± ...

  • Page 8

    Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 300 A I 240 F 220 200 180 T =125°C 160 j 140 120 100 0.0 0.5 1.0 1.5 ...

  • Page 9

    Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group Circuit Diagram 9 BSM 150 GB 120 DN2 Mar-28-1996 ...