BSM150GB120DN2 Siemens Semiconductor Group, BSM150GB120DN2 Datasheet
BSM150GB120DN2
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BSM150GB120DN2 Summary of contents
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IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current ...
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Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 150 ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 5.6 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 °C j 1300 W 1100 P tot 1000 900 800 700 600 500 400 300 200 100 Collector current ...
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Typ. output characteristics parameter µ ° 300 A 17V 15V I 240 13V C 11V 220 9V 7V 200 180 160 140 120 100 80 ...
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Typ. gate charge Gate parameter 150 A C puls 600 200 400 600 Reverse biased safe operating ...
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Typ. switching time inductive load , T = 125° par 600 ± ...
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Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 300 A I 240 F 220 200 180 T =125°C 160 j 140 120 100 0.0 0.5 1.0 1.5 ...
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Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group Circuit Diagram 9 BSM 150 GB 120 DN2 Mar-28-1996 ...