BAT760 NXP Semiconductors, BAT760 Datasheet

Planar medium power Schottky barrier single diode with an integrated guard ring forstress protection, encapsulated in a SOD323 (SC-76) very small Surface-MountedDevice SMD plastic package

BAT760

Manufacturer Part Number
BAT760
Description
Planar medium power Schottky barrier single diode with an integrated guard ring forstress protection, encapsulated in a SOD323 (SC-76) very small Surface-MountedDevice SMD plastic package
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Planar medium power Schottky barrier single diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted
Device SMD plastic package.
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
V
I
V
F
R
F
BAT760
Medium power Schottky barrier single diode
Rev. 03 — 17 October 2008
Ultra high-speed switching
Very low forward voltage
Guard-ring protected
Very small SMD plastic package
Ultra high-speed switching
Voltage clamping
Protection circuits
Pulse test: t
Quick reference data
Parameter
reverse voltage
forward current
forward voltage
p
300 s;
0.02.
Conditions
I
F
= 1 A
[1]
Min
-
-
-
Typ
-
-
480
Product data sheet
Max
20
1
550
Unit
V
A
mV

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BAT760 Summary of contents

Page 1

... BAT760 Medium power Schottky barrier single diode Rev. 03 — 17 October 2008 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted Device SMD plastic package. 1.2 Features ...

Page 2

... Rev. 03 — 17 October 2008 Medium power Schottky barrier single diode Simplified outline Graphic symbol [ Marking code A4 Min - - - - 65 65 © NXP B.V. 2008. All rights reserved. BAT760 1 2 sym001 Version SOD323 Max Unit 125 C +125 C +150 ...

Page 3

... Medium power Schottky barrier single diode Conditions Min Typ in free air [ [ Min Typ [1] - 240 - 300 - 480 [ BAT760 Max Unit 220 K/W 180 K Max Unit 270 mV 350 mV 550 © NXP B.V. 2008. All rights reserved ...

Page 4

... Rev. 03 — 17 October 2008 Medium power Schottky barrier single diode 5 ( 125 C amb = 85 C amb = 25 C amb Reverse current as a function of reverse voltage; typical values mld564 (V) R © NXP B.V. 2008. All rights reserved. BAT760 mld563 ( ...

Page 5

... Dimensions in mm Package outline SOD323 (SC-76) Packing methods Description SOD323 4 mm pitch tape and reel Rev. 03 — 17 October 2008 Medium power Schottky barrier single diode 1.1 0.8 0.45 1 0.15 2 0.40 0.25 0.25 0.10 03-12-17 [1] Packing quantity 3000 -115 Section 13. © NXP B.V. 2008. All rights reserved. BAT760 10000 -135 ...

Page 6

... Rev. 03 — 17 October 2008 Medium power Schottky barrier single diode 0 0 Dimensions in mm Dimensions in mm preferred transport direction during soldering © NXP B.V. 2008. All rights reserved. BAT760 solder lands solder resist solder paste occupied area sod323_fr solder lands solder resist occupied area ...

Page 7

... Product data sheet data”: added 4: superseded by minimized package outline drawing information”: added “Soldering”: added information”: updated Product specification Product specification Rev. 03 — 17 October 2008 BAT760 Change notice Supersedes - BAT760_2 - BAT760_1 - - © NXP B.V. 2008. All rights reserved ...

Page 8

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 17 October 2008 Medium power Schottky barrier single diode © NXP B.V. 2008. All rights reserved. BAT760 ...

Page 9

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAT760 All rights reserved. Date of release: 17 October 2008 Document identifier: BAT760_3 ...

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