BAT760 NXP Semiconductors, BAT760 Datasheet - Page 4

• Manufacturer Part Number: BAT760
• Description: Planar medium power Schottky barrier single diode with an integrated guard ring forstress protection, encapsulated in a SOD323 (SC-76) very small Surface-MountedDevice SMD plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BAT760_3
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
10
I
10
10
F
10
1
3
2
1
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
amb
amb
amb
(1)
= 125 C
= 85 C
= 25 C
amb
(2)
0.2
= 25 C
(3)
0.4
(pF)
C
80
60
40
20
d
0
0
V
F
(V)
mld562
Rev. 03 — 17 October 2008
0.6
5
10
Fig 2.
( A)
(1) T
(2) T
(3) T
I
10
10
10
10
R
10
15
1
Medium power Schottky barrier single diode
5
4
3
2
0
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
V
R
mld564
(V)
= 125 C
= 85 C
= 25 C
5
20
10
15
(1)
(2)
(3)
© NXP B.V. 2008. All rights reserved.
20
BAT760
V
R
mld563
(V)
25
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